KIA
SEMICONDUCTORS
130A，100V
N-CHANNEL MOSFET
KNX2910A
1.Applications
n
n
High efficiency synchronous rectification in SMPS
High speed power switching
2.
Features
n
n
n
n
n
R
DS(on)
=5.0mΩ @V
GS
= 10 V
Super high dense cell design
Ultra low On-Resistance
100% avalanche tested
Lead Free and Green devices available (RoHS Compliant)
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 6
Rev 1.3 Apr. 2018
KIA
SEMICONDUCTORS
130A，100V
N-CHANNEL MOSFET
KNX2910A
4.
Ordering Information
Part Number
KNB2910A
KNP2910A
KNH2910A
Package
TO-263
TO-220
TO-3P
Brand
KIA
KIA
KIA
5.
Absolute maximum ratings
(T
C
=25
ºC
, unless otherwise specified)
Ratings
Units
TO-220/263
TO-3P
100
±25
130
99
560
552
300
150
T
J
T
STG
I
S
175
-55~+175
140
375
187.5
V
V
A
A
A
mJ
W
W
°C
°C
A
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain currenet T
C
=25
ºC
2
Continuous drain currenet T
C
=100
ºC
2
300us pulsed drain current tested T
C
=25
ºC
1
Avalanche energy single pulse
3
Power dissipation
T
C
=25
ºC
T
C
=100
ºC
Symbol
V
DSS
V
GSS
I
D
I
DP
E
AS
P
D
Maximum junction temperature
Storage temperature range
Diode continuous forward current T
C
=25
ºC
6.
Thermal characteristics
Parameter
Thermal resistance,Junction-to-case
Thermal resistance,Junction-to-ambient
Symbol
θ
JC
θ
JA
Rating
0.5
62.5
Unit
ºC/W
ºC/W
2 of 6
Rev 1.3 Apr. 2018
KIA
SEMICONDUCTORS
130A，100V
N-CHANNEL MOSFET
KNX2910A
7.
Electrical characteristics
Parameter
Off Characteristics
Drain-source breakdown voltage
Drain-to-source leakage current
Gate-to-source leakage current
On characteristics
Gate threshold voltage
Static drain-source on-resistance
4
Gate charge characteristics
5
Total gate charge
Gate-source charge
Gate-drain (Miller)charge
Dynamic characteristics
5
Gate series resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Source-drain body diode characteristics
Diode forward voltage
4
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Q
g
Q
gs
Q
gd
(T
C
=25°C,unless otherwise notes)
Conditions
Min
Typ Max Unit
V
GS
=0V,I
D
=250μA
V
DS
=100V ,V
GS
=0V
T
J
=125
ºC
V
GS
=25V,V
DS
=0V
V
GS
=-25V,V
DS
=0V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=40A
100
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.0
130
32
55
1
24
91
75
65
6800
630
350
-
43
67
-
1
30
100
-100
4.0
7.0
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
V
μA
μA
nA
nA
V
mΩ
V
DS
=80V,I
D
=70A,V
GS
=10V
nC
Ω
nS
R
G
V
DS
=0V,V
GS
=0V,f=1.0MHz
T
d(ON)
t
rise
V
DD
=50V,I
D
=70A,V
GEN
=10V,
R
G
=5Ω
T
d(OFF)
t
fall
C
iss
C
oss
V
DS
=50V,V
GS
=0V,f=1.0MHz
C
rss
T
J
=25°C,unless otherwise notes
V
SD
V
GS
=0V,I
S
=70A
t
rr
I
SD
=70A,di
F
/dt=100A/μs,
Q
rr
pF
V
ns
nC
Note: 1. Pulse width limited by safe operating area.
2. Caiculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A
3. Limited by T
Jmax,
I
AS
=47A, V
DD
=48V, R
G
=50Ω, Starting T
J
=25°C.
4. Pulse test; Pulse width <300μs; duty cycle <2%.
5. Guaranteed by design, not subject to production testing.
6.KIA finished product specifications please customer before placing order, should obtain the latest
version of the finished product specifications.
3 of 6
Rev 1.3 Apr. 2018
Analog electronics
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