KIA4N60HI datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> KIA4N60HI

KIA4N60HI: DescriptionDrain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 4A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.7Ω @ 2A, 10V Maximum power consumption Dispersed (Ta=25°C): 93W (Tc) Type: N channel N channel, 600V, 4A; CategoryDiscrete semiconductor MOS (field effect tube); File Size321KB，6 Pages; ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.; Websitehttp://www.kiaic.com/page/qiyejianjie.htm; Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.

Download Datasheet Parametric View All

KIA4N60HI Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 4A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.7Ω @ 2A, 10V Maximum power consumption Dispersed (Ta=25°C): 93W (Tc) Type: N channel N channel, 600V, 4A

KIA4N60HI Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	600V
Continuous drain current (Id) at 25°C	4A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	2.7Ω @ 2A,10V
Maximum power dissipation (Ta=25°C)	93W(Tc)
type	N channel

KIA4N60HI Preview

Download Datasheet

View All

KIA

SEMICONDUCTORS

4.0A 600V

N-CHANNEL MOSFET

4N60H

1.Description

The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high

voltage, high speed power switching applications such as switching regulators, switching converters,

solenoid, motor drivers, relay drivers.

Features

DS(ON)

=2.3Ω@ V

=10V

Low gate charge (typical 13.5nC)

High ruggedness

Fast switching capability

Avalanche energy specified

Improved dv/dt capability

Pin configuration

Function

Gate

Drain

Source

Drain

1 of 6

Rev 1.2 Dec 2014

Recommended Resources

Series type regulated voltage stabilizing circuit

multifunctional circuit

Application circuit of eddy current sensor in steel plate width measurement

Circuit diagram of adding hands-free function to telephone

Touch sound alarm

Motorcycle charger circuit diagram

STM32U585 Problems with configuring USB using STM32CubeMX: This evaluation did not yield any results and was mostly about asking questions, and now there is another problem. The board will be sent back tomorrow and I am thinking about playing with it. I saw t...; littleshrimp stm32/stm8

Looking for C8051F58x/F59x IDE?: Looking for C8051F58x/F59x IDE.Thank you so much!...; yhyworld MCU

How to program a DSP: ...; fish001 DSP and ARM Processors

9. [Learning LPC1768 library functions] Clkout experiment: [i=s]This post was last edited by cxmdz on 2019-8-3 09:58[/i]LPC1768 has only one clock output pin P1.27, which can output a clock of a specified frequency. /******************************************...; cxmdz NXP MCU

Smaller and more reliable 65V GaN technology makes radar more powerful: Radar equipment not only plays an important role in the security and defense work of national defense departments , but also has a wide range of applications in the commercial field, such as air traff...; alan000345 RF/Wirelessly

DSP28335 eCAP module capture pulse problem: [i=s]This post was last edited by Min丨Dayu on 2019-7-31 20:00[/i]DSP28335 eCAP module capture pulse problemHey guys, I want to ask a question. Is the result of the pulse rising edge count captured by ...; 闵丨大 Microcontroller MCU

Popular Components