KIA
SEMICONDUCTORS
75A，100V
N-CHANNEL MOSFET
3510A
4.
Absolute maximum ratings
(T
A
=25°C,unless otherwise noted)
Rating
Units
To-220/263
100
±25
175
-55 to175
75
51
219
30
225
166
83
65
44
To-252
V
V
ºC
ºC
A
A
A
A
mJ
W
W
Parameter
Drain-source voltage
Gate-source voltage
Maximum junction temperature
Storage temperature range
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
Maximum power dissipation
T
C
=25
ºC
T
C
=100ºC
T
C
=25ºC
T
C
=100ºC
T
C
=25ºC
Symbol
V
DSS
V
GSS
T
J
T
STG
I
D3
I
DP4
I
AS5
E
AS5
P
D
5.
Thermal characteristics
Parameter
Thermal resistance,Junction-ambient
Thermal resistance,Junction-case
Symbol
R
θJA
R
θJC
Rating
62.5
0.9
Unit
ºC/W
ºC/W
2 of 6
Rev 1.2 Apr 2015
KIA
SEMICONDUCTORS
75A，100V
N-CHANNEL MOSFET
3510A
6.
Electrical characteristics
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Symbol
BV
DSS
I
DSS
V
GS(th)
I
GSS
(T
A
=25°C,unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
V
GS
=0V,I
DS
=250Μa
V
DS
=80V, V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
D
=250μA
V
GS
=+25V, V
DS
=0V
V
GS
=10V,I
DS
=50A
Drain-source on-state resistance
R
DS(on)1
(TO-220\TO-263)
V
GS
=10V,I
DS
=50A
(TO-252)
Gate resistance
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
R
g
V
SD1
t
rr
Q
rr
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=50V,V
GS
=10V
I
DS
=30A
V
DD
=50V,I
DS
=30A,
R
G
=6.8Ω,V
GS
=10V
V
DS
=0V, V
GS
=0V,f=1MHz
I
SD
=50A, V
GS
=0V
I
SD
=50A ,
dl
SD
/dt=100A/μs
V
DS
=25V,V
GS
=0V,
f=1MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
-
-
2.0
-
-
-
-
-
3.0
-
9
-
1
20
4.0
+100
11
mΩ
9
1.2
-
46
86
2946
339
179
15
108
51
59
60
13.7
22.8
14
-
1.3
-
-
-
-
-
-
-
-
-
-
--
--
nC
ns
pF
Ω
V
nS
nC
V
μA
V
nA
Note : 1. Pulse test; pulse width<300us duty cycle<2%.
2. Guaranteed by design, not subject to production testing.
3. Package limitation current is 55A.
4. Repetitive rating, pulse width limited by max junction temperature.
5. Starting T
J
=25ºC, L=0.5mH, I
AS
=30A.
3 of 6
Rev 1.2 Apr 2015
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