KIA10N65H datasheet, PDF - EEWORLD Datasheet

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KIA10N65H: DescriptionDrain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 10A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 750mΩ @ 5A, 10V Maximum power dissipation (Ta= 25°C): 52W Type: N-channel N-channel 10A 650V; CategoryDiscrete semiconductor MOS (field effect tube); File Size289KB，5 Pages; ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.; Websitehttp://www.kiaic.com/page/qiyejianjie.htm; Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.

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KIA10N65H Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 10A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 750mΩ @ 5A, 10V Maximum power dissipation (Ta= 25°C): 52W Type: N-channel N-channel 10A 650V

KIA10N65H Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	650V
Continuous drain current (Id) at 25°C	10A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	750mΩ @ 5A,10V
Maximum power dissipation (Ta=25°C)	52W
type	N channel

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KIA

SEMICONDUCTORS

10A，650V

N-CHANNEL MOSFET

10N65H

1.Description

The KIA10N65H N-Channel enhancement mode silicon gate power MOSFET is designed

for high voltage, high speed power switching applications such as high efficiency switched mode power

supplies, active power factor correction,electronic lamp ballasts based on half bridge to pology.

Features

DS(on)

=0.65Ω @ V

=10V

Low gate charge ( typical 48nC)

Fast switching capability

avalanche energy specified

Improved dv/dt capability

Pin configuration

Function

Gate

Drain

Source

1 of 5

Rev 1.1 JAN 2014

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