KBL401 datasheet, PDF - EEWORLD Datasheet

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KBL401: DescriptionSingle Phase 4.0A Silicon Bridge Rectifiers Single Phase 4.0A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor; File Size147KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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KBL401 Overview

Single Phase 4.0A Silicon Bridge Rectifiers Single Phase 4.0A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 4.0A Silicon Bridge Rectifiers

Product model: KBL401

product features:

UL Recognized File # E-230084

Surge overload rating-200 amperes peak

Ideal for printed circuit boards

Plastic material has Underwriters Laboratory Flammablilty Classification 94V-0

Mounting Polsition:Any

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 50 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 100V

Maximum RMS Voltage VRMS Voltage effective value: 70V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 100V

Maximum Average Forward TC = 100℃ Current @ TA = 50℃ IF(AV) Maximum forward current: 4.0 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 150 A

Maximum DC Rverse Voltage Drop Per Leg DBL4@ 4.0A VF Maximum forward voltage drop: 1.0 V

Maximum Reverse Leakage at rated TA=25℃ IR Maximum reverse leakage current: 10.0μA

DC blocking voltage TC = 100℃ IR Maximum reverse leakage current: 500μA

Operating and Storage Temperature Range TA Operating Junction Temperature JC, TSTG Storage Temperature Range: -55 to +150 ℃

Package: KBL

KBL401 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
Maximum non-repetitive peak forward current	150 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	4 A
Maximum repetitive peak reverse voltage	100 V
surface mount	NO

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KBL4005 THRU KBL410

桥式整流器

Bridge Rectifier

■特征

Features

●

■外½尺寸和印记

Outline Dimensions and Mark

.580(15.7)

.540(13.7)

RRM

50V~1000V

●

玻璃钝化芯片

Glass passivated chip

●

耐正向浪涌电流½力高

High surge forward current capability

KBL

.640(16.3)

.600(15.2)

.052(1.30)

.048(1.20)

D IA

.220(5.60)

.181(4.60)

.256(6.50)

.217(5.50)

■用途

Applications

●

.630(16.0)

M IN

½一般电源单相桥式整流用

General purpose 1 phase Bridge

rectifier applications

.935(23.7)

.895(22.7)

D im ensions in inches and (m illim eters)

.083

(2.1)

■极限值（绝对最大额定值）

Limiting Values(Absolute Maximum Rating)

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse Voltage

平均整流输出电流

Average Rectified Output

Current

正向（不重复）浪涌电流

Surge(Non-repetitive)Forward

Current

正向浪涌电流的平方对电流浪

涌持续

时间的积分值

Current Squared Time

存储温度

Storage Temperature

结温

Junction Temperature

符号

Symbol

RRM

FSM

单½

Unit

条件

Conditions

KBL4

005 01 02 04 06 08 10

50 100 200 400 600 800 1000

60H

正弦波，电阻负½½，T

=40℃

60H

sine wave, R- load, T

=40℃

60H

正弦波，一个周期，T

=25℃

60H

sine wave, 1 cycle, T

=25℃

1ms≤t＜8.3ms T

=25

℃

单个二

极管

1ms≤t

＜

8.3ms T

=25

℃

,Rating of

per diode

150

STG

℃

-55 ~+150

■电特性（T

a=25℃

除非另有规定）

Electrical Characteristics

（T

=25℃ Unless otherwise specified）

参数名称

Item

正向峰值电压

Peak Forward Voltage

反向峰值电流

Peak Reverse Current

热阻

Thermal Resistance

符号

单½

Symbol Unit

RRM

J-A

℃

J-L

μA

测试条件

Test Condition

=4A,脉冲测试，单个二极管的额定值

=4A, Pulse measurement, Rating of per diode

RRM

,脉冲测试，单个二极管的额定值

RRM

, Pulse measurement, Rating of per diode

结和环境之间

Between junction and ambient

结和引线之间

Between junction and lead

最大值

Max

1.05

(1)

2.4

(2)

说明（Notes）:

（1）PN结到周围环境的热阻,安装在3.0*3.0*0.11”(7.5*7.5*0.3

cm)规格的铝板上

Thermal resistance from junction to ambient with units mounted on 3.0*3.0*0.11” thick(7.5*7.5*0.3cm) aluminum plate

（2）PN结到引线的热阻,安装在PCB板上，引线长0.375’’(9.5mm)，铜板0.5*0.5’’(12*12mm)

Thermal resistance from junction to lead with units mounted on P.C.B.at 0.375’’(9.5mm)lead length and 0.5*0.5’’(12*12mm)

copper pads

Document Number 0024

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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