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HZ4C1

Description
4.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size83KB,4 Pages
ManufacturerNanjing International Group Co.,Ltd
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HZ4C1 Overview

4.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

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HZ Series
Silicon Epitaxial Planar Zener Diodes
for stabilized power supply
Features
• Low leakage, low zener impedance and maximum
power dissipation of 500 mW are ideally suited for
stabilized power supply, etc.
• Wide spectrum from 1.6 V through 38 V of zener
voltage provide flexible application.
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T
a
= 25
O
C
(V
F
= 1 V Max. at I
F
= 100 mA)
Type
HZ2A1
HZ2A2
HZ2A3
HZ2B1
HZ2B2
HZ2B3
HZ2C1
HZ2C2
HZ2C3
HZ3A1
HZ3A2
HZ3A3
HZ3B1
HZ3B2
HZ3B3
HZ3C1
HZ3C2
HZ3C3
HZ4A1
HZ4A2
HZ4A3
HZ4B1
HZ4B2
HZ4B3
HZ4C1
HZ4C2
Zener Voltage
1)
V
Z
Min. (V)
Max. (V)
1.6
1.8
1.7
1.9
1.8
2
1.9
2.1
2
2.2
2.1
2.3
2.2
2.4
2.3
2.5
2.4
2.6
2.5
2.7
2.6
2.8
2.7
2.9
2.8
3
2.9
3.1
3
3.2
3.1
3.3
3.2
3.4
3.3
3.5
3.4
3.6
3.5
3.7
3.6
3.8
3.7
3.9
3.8
4
3.9
4.1
4
4.2
4.1
4.3
at l
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Symbol
P
tot
T
j
T
stg
Value
500
175
- 55 to + 175
Unit
mW
O
C
C
O
Reverse Leakage Current
I
R
at V
R
Max. (µA)
(V)
25
0.5
25
0.5
25
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
0.5
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
Dynamic Resistance
Z
ZT
at l
ZT
Max. (Ω)
(mA)
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
100
5
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