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HTL145

Description
npn epitaxial planar transistor
File Size35KB,3 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
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HTL145 Overview

npn epitaxial planar transistor

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6454-B
Issued Date : 1993.02.24
Revised Date : 2000.10.01
Page No. : 1/3
HTL145
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTL145 is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ..................................................................................... 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 500 V
VCEO Collector to Emitter Voltage ................................................................................... 500 V
IC Collector Current ....................................................................................................... 300 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
ICBO
ICER
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
500
500
-
-
-
-
-
-
50
50
40
10
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
10
1
200
500
3
900
-
300
-
-
30
Unit
V
V
uA
uA
nA
mV
V
mV
Test Conditions
IC=100uA
IC=1mA
VCB=500V
VCE=200V
VEB=6V
IC=20mA, IB=2mA
IC=100mA, IB=4mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=20mA
VCE=10V, IC=80mA
VCE=20V, IE=10mA
VCB=20V, f=1MHZ
MHz
pF
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
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