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HT772

Description
-30V -3A PNP epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size53KB,5 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HT772 Overview

-30V -3A PNP epitaxial planar transistor

Features

Product Name: -30V -3A PNP Epitaxial Planar Transistor


Product model: HT772


Product Description:


The HT772 is designed for use in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.



parameter:


Type: PNP


BVCEO: -30V


IC: -3A


PD: 10W


hFE: MIN 100


hFE: Max. 400


VCE(sat): Max. -0.5V


RoHS: PF(lead-free)


Package: TO-126


HT772 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200209
Issued Date : 1993.05.15
Revised Date : 2006.02.20
Page No. : 1/5
HT772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HT772 is designed for using in output stage of 1w audio amplifier, voltage
regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings
(T
A
=25°C)
TO-126
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ...................................................................................................................... 1 W
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 10 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage........................................................................................................................ -40 V
BV
CEO
Collector to Emitter Voltage..................................................................................................................... -30 V
BV
EBO
Emitter to Base Voltage............................................................................................................................. -5 V
I
C
Collector Current (DC) ..................................................................................................................................... -3 A
I
C
Collector Current (Pulse).................................................................................................................................. -7 A
I
B
Base Current (DC)......................................................................................................................................... -0.6 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE1
*h
FE2
f
T
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-
-1
-
200
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
400
-
-
MHz
pF
Unit
V
V
V
uA
uA
V
V
I
C
=-100uA
I
C
=-1mA
I
E
=-10uA
V
CB
=-30V
V
EB
=-3V
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
I
C
=-20mA, V
CE
=-2V
I
C
=-1A, V
CE
=-2V
I
C
=-0.1A, V
CE
=-5V
V
CB
=-10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE2
Rank
Range
Q
100-200
P
160-320
E
200-400
HT772
HSMC Product Specification

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