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HSC945

Description
50V 0.1A NPN epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size51KB,5 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
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HSC945 Overview

50V 0.1A NPN epitaxial planar transistor

Features

Product Name: 50V 0.1A NPN Epitaxial Planar Transistor


Product model: HSC945


Product Description:


The HSC945 is designed for using. Driver stage of AP amplifier and low speed switching applications.




parameter:


Type: NPN


BVCEO: 50V


IC: 0.1A


PD: 0.25W


hFE: MIN 135


hFE: Max. 600


VCE(sat): Max. 0.3V


RoHS: PF(lead-free)


Package: TO-92


HSC945 Preview

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6517
Issued Date : 1995.02.11
Revised Date : 2004.08.09
Page No. : 1/5
HSC945
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC945 is designed for using driver stage of AP amplifier and low speed
switching applications.
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150
°C
Junction Temperature ..................................................................................................................... 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................... 250 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 60 V
V
CEO
Collector to Emitter Voltage ........................................................................................................................ 50 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 5 V
I
C
Collector Current ........................................................................................................................................ 100 mA
I
B
Base Current ................................................................................................................................................ 50 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE1
*h
FE2
f
T
Cob
Min.
60
50
5
-
-
-
50
135
150
-
Typ.
-
-
-
-
-
0.1
-
-
-
-
Max.
-
-
-
100
100
0.3
-
600
600
4
MHz
pF
Unit
V
V
V
nA
nA
V
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
B
=0
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=0.1mA
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=10mA, f=100MHz
V
CB
=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification of hFE2
Rank
Range
Q
135-270
P
200-400
K
300-600
HSC945
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
1000
V
CE(sat)
@I
C
=10I
B
Spec. No. : HE6517
Issued Date : 1995.02.11
Revised Date : 2004.08.09
Page No. : 2/5
Saturation Voltage & Collector Current
125 C
Saturation Voltage (mV)
o
hFE
100
75 C
o
25 C
o
75 C
o
125 C
o
o
25 C
hFE @ V
CE
=6V
100
1
10
100
10
0.1
1
10
100
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
On Voltage & Collector Current
1
25 C
o
Saturation Voltage (mV)
V
BE(sat)
@ I
C
=10I
B
75 C
125 C
o
o
V
BE(sat)
@ I
C
=10I
B
100
0.1
1
10
100
On Voltage (mV)
0.1
0.1
1
10
100
Collector Current-I
C
(mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
10
Cutoff Frequency & Collector Current
1000
Cutoff Frequency (MHz)
..
.
Capacitance (Pf)
fT @ V
CE
=5V
100
Cob
1
0.1
1
10
100
10
1
10
100
Reverse Biased Voltage (V)
Collector Current (mA)
HSC945
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6517
Issued Date : 1995.02.11
Revised Date : 2004.08.09
Page No. : 3/5
Safe Operating Area
10000
P
T
=1ms
1000
P
T
=100ms
PD-Ta
300
Power Dissipation-PD (mW)
250
Collector Current (mA)
200
P
T
=1s
100
150
100
10
50
1
1
10
100
0
0
50
100
o
150
200
Forward Voltage (mV)
Ambient Temperature-Ta( C)
HSC945
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HE6517
Issued Date : 1995.02.11
Revised Date : 2004.08.09
Page No. : 4/5
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
SC
9 4 5
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSC945
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE6517
Issued Date : 1995.02.11
Revised Date : 2004.08.09
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HSC945
HSMC Product Specification
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