HS3G datasheet, PDF - EEWORLD Datasheet

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HS3G: DescriptionHigh Efficient Rectifier High Efficiency Rectifier Diode; CategoryDiscrete semiconductor; File Size139KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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HS3G Overview

High Efficient Rectifier High Efficiency Rectifier Diode

Features

Product Name: High Efficient Rectifier High Efficiency Rectifier Diode

Product model: HS3G

product features:

Io: 3.0A

VRRM: 50V-1000V

High forward surge current capability

High surge current capability

Package: Molded plastic

Cases: Molded plastic

use:

Rectifier

product data:

Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 400V

Average Forward Current IF(AV) Average forward current: 3A

Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 150A

Junction Temperature TJ Junction temperature: -55 to +150 ℃

Storage Temperature TSTG storage temperature: -55 to +150 ℃

Peak Forward Voltage (IFM=3.0A) VFM Forward peak voltage: 1.0V

Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 10μA

IRRM2 (Ta=125℃) Reverse peak current: 200μA

Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 50ns

Thermal Resistance (Typical) RθJ-A Thermal resistance (typical) : 47 ℃/W ; RθJ-L Thermal resistance (typical) : 13 ℃/W

Package: DO-214AB (SMC)

HS3G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	unknown
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	150 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	3 A
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Base Number Matches	1

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HS3A THRU HS3M

高效整流二极管

High Efficient Rectifier

■特征

Features

■外½尺寸和印记

Outline Dimensions and Mark

Mounting Pad Layout

0.151

(3.84)

0.150

(3.82)

0.119(3.03)

0.390

(9.90)

●

3.0A

●

RRM

50V-1000V

●

耐正向浪涌电流½力高

High surge current capability

●

封装：模压塑料

Cases: Molded plastic

DO-214AB(SMC)

.129(3.27)

.112(2.85)

.280(7.11)

.260(6.60)

.103(2.61)

.078(1.99)

.060(1.52)

.030(0.76)

.008(0.20)

.004(0.10)

.320(8.13)

.305(7.75)

.012(0.31)

.006(0.15)

.245(6.22)

.220(5.59)

■用途

Applications

●整流用

Rectifier

Dimensions in inches and (millimeters)

■极限值（绝对最大额定值）

Limiting Values (Absolute Maximum Rating)

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse Voltage

正向平均电流

Average Forward Current

正向（不重复）浪涌电流

Surge(Non-repetitive)Forward

Current

结温

Junction Temperature

储存温度

Storage Temperature

符号

Symbol

RRM

F(AV)

单½

Unit

测试条件

Test Conditions

正弦半波

60Hz

，电阻负 ½½ ，

TL=110℃

60HZ Half-sine wave, Resistance

load, TL =110℃

正弦半波60Hz，

一个周期，

Ta=25℃

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

HS3

100

200

400

600

800

1000

FSM

STG

℃

150

-55~+150

-55 ~ +150

■电特性

（Ta=25℃ 除非另有规定）

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

参数名称

Item

正向峰值电压

Peak Forward Voltage

最大反向恢复时间

Maximum reverse recovery

time

反向漏电流

Peak Reverse Current

热阻(典型)

Thermal

Resistance(Typical)

符号

Symbol

RRM1

RRM2

J-A

单½

Unit

μA

测试条件

Test Condition

=3.0A

=0.5A,I

=1.0A,I

=0.25A

RRM

Ta =25℃

Ta =100℃

HS3

1.0

200

1.3

1.7

℃/W

J-L

结和环境之间

Between junction and ambient

结和终端之间

Between junction and terminal

备注：Notes:

热阻从结到环境及从结到引线，在电路板的

0.3" x 0.3" (8.0毫米 x 8.0毫米)铜垫片区

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper

pad areas

Document Number 0148

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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