HOA2303 datasheet, PDF - EEWORLD Datasheet

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HOA2303: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 1.9A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 190mΩ @ 1.9A, 10V Maximum power dissipation ( Ta=25°C): 350mW Type: P-channel withstand voltage 20V, used in medium-voltage switching power supplies, input high-impedance electronic circuits; CategoryDiscrete semiconductor MOS (field effect tube); File Size452KB，3 Pages; ManufacturerShenzhen Heketai Electronics Co., Ltd.; Websitehttp://www.heketai.com; Founded in 1992, Hekotech is a high-tech innovative enterprise specializing in the R&D, design, packaging, testing, production and sales of semiconductor analog chips and discrete devices. The product line includes lithium battery protection IC, charging management IC, LDO, MOSFET, diode, TVS, bridge stack, triode and other discrete devices and integrated circuits, providing customers with application solutions and on-site technical support services. The company has ISO9001, ISO14001, IATF16949 quality system certification. The products include semiconductors and passive components, which are widely used in power supply, lighting, medical electronics, small appliances, communications, security, instruments, industrial control, automotive electronics and other fields.

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HOA2303 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 1.9A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 190mΩ @ 1.9A, 10V Maximum power dissipation ( Ta=25°C): 350mW Type: P-channel withstand voltage 20V, used in medium-voltage switching power supplies, input high-impedance electronic circuits

HOA2303 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	1.9A
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	190mΩ @ 1.9A,10V
Maximum power dissipation (Ta=25°C)	350mW
type	P channel

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Plastic-Encapsulate Mosfets

HOA2303

P-Channel MOSFET

FEATURE

TrenchFET Power MOSFET

APPLICATIONS

Load Switch for Portable Devices

DC/DC Converter

1.Gate

2.Source

3.Drain

SOT-23

Maximum ratings (T

=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Thermal Resistance from Junction to Ambient(t≤5s)

Junction Temperature

Storage Temperature

Symbol

θJA

STG

Value

-30

±20

-1.9

-0.83

0.35

357

150

-50 ~+150

Unit

℃/W

℃

GUANGDONG HOTTECH

INDUSTRIAL CO., LTD

Page:P3 -P1

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