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HMBT6520

Description
-350V -0.5A PNP epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size38KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HMBT6520 Overview

-350V -0.5A PNP epitaxial planar transistor

Features

Product Name: -350V -0.5A PNP Epitaxial Planar Transistor


Product model: HMBT6520


Product Description:


The HMBT6520 is designed for general purpose applications requiring high breakdown voltages.



product features:


High Collector-Emitter Breakdown Voltage


Low Collector-Emitter Saturation Voltage


The HMBT6520 is complementary to HMBT6517



parameter:


Type: PNP


BVCEO: -350V


IC: -0.5A


PD: 0.225W


hFE: MIN 30


hFE: Max. 200


VCE(sat): Max.-0.5V


RoHS: PF(lead-free), HF(halogen-free)


Package: SOT-23


HMBT6520 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6806
Issued Date : 1996.04.10
Revised Date : 2004.09.08
Page No. : 1/4
HMBT6520
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
High Collector-Emitter Breakdown Voltage
Low Collector-Emitter Saturation Voltage
The HMBT6520 is complementary to HMBT6517
SOT-23
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°C
Junction Temperature................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C)............................................................................................................... 225 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ........................................................................................................................ -350 V
V
CEO
Collector to Emitter Voltage..................................................................................................................... -350 V
V
EBO
Emitter to Base Voltage ............................................................................................................................... -5 V
I
C
Collector Current ...................................................................................................................................... -500 mA
I
B
Base Current ............................................................................................................................................ -250 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
CE(sat)3
*V
CE(sat)4
V
BE(on)
*V
BE(sat)1
*V
BE(sat)2
*V
BE(sat)3
*h
FE1
*h
FE2
*h
FE3
*h
FE4
*h
FE5
f
T
Cob
Min.
-350
-350
-5
-
-
-
-
-
-
-
-
-
-
20
30
30
20
15
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-300
-350
-500
-1
-2
-750
-850
-900
-
-
200
200
-
200
6
Unit
V
V
V
nA
nA
mV
mV
mV
V
V
mV
mV
mV
Test Conditions
I
C
=-100uA
I
C
=-1mA
I
E
=-10uA
V
CB
=-250V
V
EB
=-4V
I
C
=-10mA, I
B
=-1mA
I
C
=-20mA, I
B
=-2mA
I
C
=-30mA, I
B
=-3mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-10V, I
C
=-100mA
I
B
=-1mA, I
C
=-10mA
I
B
=-2mA, I
C
=-20mA
I
B
=-3mA, I
C
=-30mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-30mA
V
CE
=-10V, I
C
=-50mA
V
CE
=-10V, I
C
=-100mA
V
CE
=-20V ,I
C
=-10mA, f=20MHz
V
CB
=-20V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HMBT6520
HSMC Product Specification
MHz
pF
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