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HM1300: Descriptionsilicon pnp epitaxial type; File Size33KB，3 Pages; ManufacturerHI-SINCERITY MICROELECTRONICS CORP.

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silicon pnp epitaxial type

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HM200202

Issued Date : 2002.02.01

Revised Date : 2002.08.15

Page No. : 1/3

HM1300

SILICON PNP EPITAXIAL TYPE

Description

•

Strobo Flash Applications

•

Medium Power Amplifier Applications

Features

•

High DC Current Ogin and Excellanr hFE Linearity

•

hFE(1)=140-1000, (VCE=-1V, IC=-0.5A)

•

hFE(2)=60(Min.), (VCE=-1V, IC=-2A)

•

Low Saturation Voltage

•

VCE(sat)=-0.5V(Max.), (IC=-2A, IE=-50mA)

SOT-89

Absolute Maximum Ratings

(Ta=25°C)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Pulsed

(Note1)

Symbol

VCBO

VCES

VCEO

VEBO

ICP

Tstg

Ratios

-20

-10

-6

-2

-5

-0.2

150

-53~150

Unit

°C

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Note 1: Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)

Electrical Characteristics

(Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

V(BR)EBO

hFE(1)

(Note2)

*DC Current Gain

hFE(2)

*Collector – Emitter Saturation Voltage VCE(sat)

Base – Emitter Voltage

VBE

Cutoff Frequency

Collector Output Capacitance

Cob

Characteristic

Collector Cut-off Current

Emitter Cut-off Current

Collector – Emitter Breakdown Voltage

Emitter – Base Breakdown Voltage

Test Condition

VCE=-20V, IE=0

VBE=-6V, IC=0

IC=10mA, IB=0

IE=-1mA, IC=0

VCE=-1V, IC=-0.5A

VCE=-1V, IC=-2A

IC=-2A, IB=-50mA

VCE=-1V, IC=-2A

VCE=-1V, IC=-0.5A

VCE=-10V, IE=0,

F=1KHz

Min. Typ. Max. Unit

-100 nA

-10

-6

140

1000

-0.3 -0.5

- -0.83 -1.5

140

MHz

Note 2: hFE(1) Classification Y:140~280, GR:200~400, BL:300~600, PE:500~1000

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

HM1300

HSMC Product Specification

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