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HM112

Description
100V 4A NPN epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size54KB,5 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HM112 Overview

100V 4A NPN epitaxial planar transistor

Features

Product Name: 100V 4A NPN Epitaxial Planar Transistor


Product model: HM112


Product Description:


The HM112 is designed for use in general purpose amplifier and low-speed switching applications.




parameter:


Type: NPN


BVCEO: 100V


IC: 4A


PD: 1.2W


hFE: MIN 1000


hFE: Max. 12000


VCE(sat): Max. 2V


RoHS: PF(lead-free)


Package: SOT-89


HM112 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HM200102
Issued Date : 2001.07.30
Revised Date : 2007.03.02
Page No. : 1/5
HM112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM112 is designed for use in general purpose amplifier and low-speed switching
applications.
SOT-89
Darlington Schematic
C
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Storage Temperature............................................................................... -55 ~ +150
°C
Junction Temperature ....................................................................... +150
°C
Maximum
Operating Temperature..................................................................... +150
°C
Maximum
B
R1
R2
E
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ..................................................................................................................................... 1.2 W
Total Power Dissipation
2
(Printed circuit board 2mm thick, collector plating 1cm square or larger).......................................................................... 1.6 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage......................................................................................................................................... 100 V
BV
CEO
Collector to Emitter Voltage ..................................................................................................................................... 100 V
BV
EBO
Emitter to Base Voltage ............................................................................................................................................... 5 V
I
C
Collector Current (Continue)............................................................................................................................................... 4 A
I
C
Collector Current (Peak) ..................................................................................................................................................... 6 A
Thermal Characteristic
Symbol
R
θ
ja
Characteristic
Thermal Resistance, junction to ambient (T
A
=25 C)
o
Max.
104
Unit
o
C/W
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
Cob
Min.
100
100
-
-
-
-
-
1
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
1
2
2
2.5
2.8
-
-
200
pF
Unit
V
V
mA
mA
mA
V
V
K
I
C
=1mA
I
C
=30mA
V
CB
=100V
V
CE
=50V
V
EB
=5V
I
C
=2A, I
B
=8mA
I
C
=2A, V
CE
=4V
I
C
=1A, V
CE
=4V
I
C
=2A, V
CE
=4V
V
CB
=10V, f=0.1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HM112
HSMC Product Specification

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