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HJ44H11

Description
npn epitaxial planar transistor
File Size30KB,3 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
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npn epitaxial planar transistor

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6005-B
Issued Date : 1994.11.09
Revised Date : 2000.11.01
Page No. : 1/3
HJ44H11
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ44H11 is designed for various specific and general purpose
applications, such as: output and driver stages of amplifiers operat-
ing at frequencies from DC to greater than 1MHz;series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
Absolute Maximum Ratings
(Ta=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
Maximum Voltages and Currents
BVCEO Collector to Base Voltage ...................................................................................... 80 V
BVCES Collector to Emitter Voltage ................................................................................... 80 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ............................................................................................................. 8 A
IB Base Current .................................................................................................................... 5 A
Characteristics
(Ta=25°C)
Symbol
BVCEO
BVCES
BVEBO
ICES
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
Cob
fT
Min.
80
80
5
-
-
-
-
60
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
130
50
Max.
-
-
-
10
50
1
1.5
-
-
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=30mA, IB=0
IC=1mA, IB=0
IE=1mA, IC=0
VCB=80V, VEB=0
VEB=5V, IC=0
IC=8A, IB=0.4A
IC=8A, IB=0.8A
VCE=1V, IC=2A
VCE=1V, IC=4A
VCB=10V,
VCE=10V, IC=500mA, f=20MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
pF
MHz
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