HIRF730 datasheet, PDF - EEWORLD Datasheet

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HIRF730: Description400V 5.5AN channel power MOSFET; CategoryDiscrete semiconductor; File Size47KB，4 Pages; ManufacturerHI-SINCERITY MICROELECTRONICS CORP.

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HIRF730 Overview

400V 5.5AN channel power MOSFET

Features

Product Name: 400V 5.5AN Channel Power MOSFET

N-CHANNEL POWER MOSFET

Product model: HIRF730

Product Description:

Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

product features:

Dynamic dv/dt Rating

Repetitive Avalanche Rated

Fast Switching

Ease of Paralleling

Simple Drive Requirements

parameter:

Channel: N

VDSS voltage: 400V

ID Current: 5.5A

VGS start voltage: ±30V

RDS (on) Max. on-resistance: 1ohm

RDS(on) @VGS : 10V

RDS(on) @ID：3.3A

ROSH: PF (lead-free)

Package：TO-220AB

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