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HI6718

Description
npn epitaxial planar transistor
File Size22KB,2 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
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HI6718 Overview

npn epitaxial planar transistor

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9008-A
Issued Date : 1998.04.10
Revised Date : 2000.11.01
Page No. : 1/2
HI6718
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI6718 is designed for general purpose medium power
amplifier and switching.
Features
High power: 1.2W
High current: 1A
Absolute Maximum Ratings
(Ta=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 1 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
100
100
5
-
-
80
50
20
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
350
-
250
-
-
20
Unit
V
V
V
nA
mV
Test Conditions
IC=100uA
IC=1mA
IC=10uA
VCB=80V
IC=350mA, IB=35mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HSMC Product Specification
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