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HI117

Description
-100V -4A PNP epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size51KB,5 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HI117 Overview

-100V -4A PNP epitaxial planar transistor

Features

Product Name: -100V -4A PNP Epitaxial Planar Transistor


Product model: HI117


Product Description:


The HI117 is designed for use in general purpose amplifier and low-speed switching applications.



parameter:


Type: PNP


BVCEO: -100V


IC: -4A


PD: 25W


hFE: MIN 1000


hFE: Max. 12000


VCE(sat): Max. -2V


RoHS: PF(lead-free)


Package: TO-251


HI117 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9031
Issued Date : 1998.07.01
Revised Date : 2005.07.13
Page No. : 1/5
HI117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI117 is designed for use in general purpose amplifier and low-speed
switching applications.
TO-251
Darlington Schematic
C
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Storage Temperature ................................................................... -55 ~ +150
°C
Junction Temperature .......................................................... +150
°C
Maximum
B
R1
R2
E
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 25 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage ...................................................................................................................... -100 V
BV
CEO
Collector to Emitter Voltage................................................................................................................... -100 V
BV
EBO
Emitter to Base Voltage............................................................................................................................. -5 V
I
C
Collector Current (Continue) ............................................................................................................................ -4 A
I
C
Collector Current (Peak)................................................................................................................................... -6 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
Cob
Min.
-100
-100
-
-
-
-
-
1
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-1
-2
-2
-2.5
-2.8
-
-
200
pF
Unit
V
V
mA
mA
mA
V
V
K
I
C
=-1mA
I
C
=-30mA
V
CB
=-100V
V
CE
=-50V
V
EB
=-5V
I
C
=-2A, I
B
=-8mA
I
C
=-2A, V
CE
=-4V
I
C
=-1A, V
CE
=-4V
I
C
=-2A, V
CE
=-4V
V
CB
=-10V, f=0.1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HI117
HSMC Product Specification
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