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HER602

Description
High Efficient Rectifier High Efficiency Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size177KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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HER602 Overview

High Efficient Rectifier High Efficiency Rectifier Diode

Features

Product Name: High Efficient Rectifier High Efficiency Rectifier Diode


Product model: HER602


product features:


Io: 6.0A


VRRM: 50V-1000V


High forward surge current capability


High surge current capability



use:


Rectifier



product data:


Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 100V



Average Forward Current IF(AV) Average forward current: 6.0A



Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 200A



Junction Temperature TJ Junction temperature: -55 to +125 ℃



Storage Temperature TSTG storage temperature: -55 to +150 ℃



Peak Forward Voltage (IFM=6.0A) VFM Forward peak voltage: 1.0V



Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 5μA


IRRM2 (Ta=125℃) Reverse peak current: 50μA



Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 50ns



Thermal Resistance (Typical) RθJ-A Thermal resistance (typical): 10 ℃/W; RθJ-L Thermal resistance (typical): 2.5 ℃/W



Package: R-6



HER602 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current200 A
Number of components1
Maximum operating temperature125 °C
Maximum output current6 A
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.05 µs
surface mountNO

HER602 Preview

Download Datasheet
HER601 - HER608
6.0 AMPS. High Efficient Rectifiers
R-6
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260
o
C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 1.65 grams
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Symbol HER HER HER HER HER HER
601 602 603 604 605 606
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100 200 300 400 600
Maximum RMS Voltage
V
RMS
35
70 140 210 280 420
Maximum DC Blocking Voltage
V
DC
50
100 200 300 400 600
Type Number
HER HER
Units
607 608
800 1000
V
560 700
V
800 1000
V
A
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@T
A
= 55
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 6.0A
Maximum DC Reverse Current
@T
A
=25
o
C at Rated DC Blocking Voltage
@ T
A
=125
o
C
Maximum Reverse Recovery Time ( Note 1)
Typical Junction capacitance ( Note 2)
Typical Thermal Resistance
Operating Temperature Range
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
6.0
200
1.0
1.3
10
250
50
130
30
-65 to +150
-65 to +150
75
85
1.7
A
V
uA
uA
nS
pF
o
C/W
o
C
o
C
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on PCB.
Version: A06
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