HER308G datasheet, PDF - EEWORLD Datasheet

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HER308G: DescriptionRectifier Diode,; CategoryDiscrete semiconductor diode; File Size488KB，4 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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HER308G Overview

Rectifier Diode,

HER308G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	compli

HER308G Preview

HER301G THRU HER308G

High Efficient Rectifier

Features

● High efficiency

● High current capability

● High Reliability

● High surge current capability

● Glass passivated chip junction

● Solder dip 275 ° max. 7 s, per JESD 22-B106

RoHS

COMPLIANT

Mechanical Data

●

Package:

DO-201AD(DO-27)

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

●

Terminals:

Tin plated leads, solderable per J-STD-

002 and JESD22-B102

●

Polarity:

Color band denotes cathode end

■Maximum Ratings

(Ta=25℃ Unless otherwise specified）

PARAMETER

Device marking code

Repetitive Peak Reverse Voltage

Average Forward Current

@60Hz sine wave, Resistance load, Ta=60℃

Forward Surge Current(Non-repetitive)

@60Hz Half-sine wave, 1 cycle, Ta=25℃

Storage Temperature

Junction Temperature

RRM

F(AV)

SYMBOL

UNIT

HER301

HER302

100

HER303

200

HER304

300

3.0

HER305

400

HER306

600

HER307

800

HER308

1000

FSM

Tstg

℃

125

-55 ~+150

-55~+150

■Electrical

Characteristics

（T

=25℃ Unless otherwise specified）

PARAMETER

Maximum instantaneous

forward voltage drop per diode

Maximum DC reverse current

at rated DC blocking voltage

per diode

SYMBOL

RRM1

μA

RRM2

Ta=100℃

=0.5A I

=1A

=0.25A

Measured at 1MHZ

and Applied Reverse

Voltage of 4.0 V.D.C.

150

UNIT TEST CONDITIONS

=3.0A

Ta=25℃

HER301 HER302 HER303 HER304 HER305 HER306 HER307 HER308

1.0

1.3

2.5

1.7

Reverse Recovery time

Typical junction capacitance

■

Thermal Characteristics

（T

=25℃ Unless otherwise specified）

PARAMETER

Thermal Resistance(Typical)

SYMBOL

θJ-A

UNIT

℃/W

HER301G HER302G HER303G HER304G HER305G HER306G HER307G HER308G

1/4

S-A096

Rev. 2.1, 28-Apr-14

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

HER301G THRU HER308G

■

Ordering Information (Example)

PREFERED P/N

HER301G~HER308G

PACKAGE CODE

UNIT WEIGHT(g)

Approximate 1.05

MINIMUM

PACKAGE(pcs)

1250

250

INNER BOX

QUANTITY(pcs)

1250

250

OUTER CARTON

QUANTITY(pcs)

12500

DELIVERY MODE

Tape

Bulk

■

Characteristics (Typical)

FIG.1: Io-Ta Curve

3.0

125

FIG.2: Forward Surge Current Capability

Average Forward Output Current (A)

Peak Forward Surge Current (A)

2.4

100

8.3ms Single Half Sine Wave

JEDEC Method

1.8

1.2

Single

Phase

Half Wave 60HZ

Resistive or

Inductive Load

0.375''(9.5mm)

Lead Length

100

150

0.6

8 10

60 80 100

Ambient Temperature

(℃)

Number of Cycles

FIG.3: Forward Voltage

100

HER301G-HER303G

100

FIG.4: Typical Rrverse Characteristics

Instantaneous Forward Current (A

)

Instantaneous Reverse Current (uA)

=125

℃

HER304G-HER305G

HER306G-HER308G

1.0

=100

℃

1.0

0.1

=25

℃

0.01

0.1

TJ=25

℃

Pulse width=300us

1% Duty Cycle

0.01

0.6

0.001

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

Instantaneous Forward Voltage (V)

Percent of Rated Peak Reverse Voltage (%)

2/4

S-A096

Rev. 2.1, 28-Apr-14

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

HER301G THRU HER308G

FIG.5: Diagram of circuit and Testing wave form of reverse recovery time

NONINDUCTIVE

trr

+0.5A

(-)

(+)

(-)

NONINDUCTIV

DUT

PULSE

GENERATOR

(NOTE2)

OSCILLOSCOPE

(NOTE1)

-0.25A

(+)

NOTES:

1.Rise Time=7ns max .Inpot Impedance=1M

22pf

2.Rise Time=10ns max.Sourse Impedance=50

-1.0A

1cm

SET TIME BASE FOR

5/10ns/cm

■

Outline Dimensions

DO-201AD(DO-27)

Dim

DO-201AD(DO-27)

Min

8.50

5.00

25.4

1.20

Max

9.50

5.60

1.30

Dimensions in millimeters

3/4

S-A096

Rev. 2.1, 28-Apr-14

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

HER301G THRU HER308G

Disclaimer

The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the

right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design

or otherwise.

The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with

equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as

medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety

devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use

of sale.

This publication supersedes & replaces all information previously supplied. For additional information, please visit our website

http://

www.21yangjie.com

, or consult your nearest Yangjie’s sales office for further assistance.

4/4

S-A096

Rev. 2.1, 28-Apr-14

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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