Junction Temperature ..................................................................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ........................................................................................................................................ 1 W
•
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ............................................................................................................................................ -40 V
V
CEO
Collector to Emitter Voltage......................................................................................................................................... -25 V
V
EBO
Emitter to Base Voltage ................................................................................................................................................. -6 V
I
C
Collector Current ............................................................................................................................................................. -1.5 A
I
B
Base Current.................................................................................................................................................................... -0.5 A
Electrical Characteristics
(T =25°C)
A
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
V
BE(on)
*h
FE1
*h
FE2
*h
FE3
f
T
Min.
-40
-25
-6
-
-
-
-
-
45
120
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.5
-1.2
-1
-
320
-
-
Unit
V
V
V
nA
nA
V
V
V
I
C
=-100uA, I
E
=0
I
C
=-2mA, I
B
=0
I
E
=-100uA, I
C
=0
V
CB
=-35V, I
E
=0
V
EB
=-6V, I
C
=0
Test Conditions
I
C
=-0.8A, I
B
=-80mA
I
C
=-0.8A, I
B
=-80mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-5mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
MHz
V
CE
=-10V, I
C
=-50mA, f=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification on h
FE2
Rank
Range
C
120-200
D
160-320
HE8550
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
10000
Spec. No. : HE6114
Issued Date : 1992.09.30
Revised Date : 2006.07.28
Page No. : 2/4
Saturation Voltage & Collector Current
V
CE
=1V
Saturation Voltage (mV)
1000
V
BE(sat)
@ IC=10IB
100
V
CE(sat)
@ I
C
=10I
B
10
hFE
100
10
0.1
1
10
100
1000
10000
1
0.1
1
10
100
1000
10000
Collector Current (mA)
Collector Current (m )
On Voltage & Collector Current
10000
1000
Cutoff Frequency & Collector Current
Cutoff Frequency (MHz)
On Voltage (mV)
V
CE
=10V
100
1000
V
BE(on)
@ V
CE
=1V
100
1
10
100
1000
10000
10
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
Capcitance & Reverse-Biased Voltage
100
1.2
PD - T
A
1
PD(W), Power Dissipation
Capacitance (pF)
0.8
Cob
10
0.6
0.4
0.2
1
0.1
1
10
100
0
0
50
100
o
150
200
Reverse-Biased Voltage (V)
Ambient Temperature-T
A
( C)
HE8550
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HE6114
Issued Date : 1992.09.30
Revised Date : 2006.07.28
Page No. : 3/4
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
E
8 5 5 0
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
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