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H8205: Description20V 6A dual N-channel enhancement mode MOSFET; CategoryDiscrete semiconductor; File Size48KB，4 Pages; ManufacturerHI-SINCERITY MICROELECTRONICS CORP.

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H8205 Overview

20V 6A dual N-channel enhancement mode MOSFET

Features

Product Name: 20V 6A Dual N-Channel Enhancement Mode MOSFET

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

Product model: H8205

Product Description:

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)

product features:

RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A

High Density Cell Design for Ultra Low On-Resistance

High Power and Current Handing Capability

Fully Characterized Avalanche Voltage and Current

Ideal for Li ion Battery Pack Applications

Applications:

Battery Protection

Load Switch

Power Management

parameter:

Channel: N

VDSS voltage: 20V

ID Current: 6A

VGS start voltage: ±8V

RDS (on) Max. on-resistance: 0.028ohm

RDS(on) @VGS : 4.5V

RDS(on) @ID：6A

ESD Protected ：NO

ROSH: PF (lead-free)

Package: TSOP-6

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200904

Issued Date : 2009.02.27

Revised Date : 2010.07.02

Page No. : 1/4

H8205

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

H8205 Symbol & Pin Assignment

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced

trench process. It has been optimized for power management applications with a

wide range of gate drive voltage (2.5V-10V)

Pin 1: Source 1

Pin 2: Drania 1 & 2

Pin 3: Source 2

Pin 4: Gate 2

Pin 5: Drania 1 & 2

Pin 6: Gate 1

Features



DS(on)

=40m@V

=2.5V, I

=5.2A; R

DS(on)

=25m@V

=4.5V, I

=6A



High Density Cell Design for Ultra Low On-Resistance



High Power and Current Handing Capability



Fully Characterized Avalanche Voltage and Current



Ideal for Li ion Battery Pack Applications

Applications



Battery Protection



Load Switch



Power Management

Absolute Maximum Ratings

=25

C, unless otherwise noted)

Symbol

, T

stg



Drain-Source Voltage

Gate-Source Voltage

Drain Current

Drain Current (Pulsed)

Total Power Dissipation @T

=25 C

Parameter

Ratings

8

1.3

-55 to +150

62.5

Units

C

C/W

Total Power Dissipation @T

=75

Operating and Storage Temperature Range

Thermal Resistance Junction to Ambient

*1: Maximum DC current limited by the package

*2: 1-in

2oz Cu PCB board

H8205

HSMC Product Specification

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