HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 1/5
H4946 Series
N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A)
8
•
1
2
3
8-Lead Plastic
DIP-8
Package Code: P
Features
•
R
DS(on)
<41mΩ@V
GS
=10V, I
D
=5.0A
•
R
DS(on)
<55mΩ@V
GS
=4.5V, I
D
=2.5A
•
Low On-resistance
•
Fast Switching Speed
•
SOP-8 Package
7
6
5
8-Lead Plastic
SO-8
Package Code: S
4
H4946DS Symbol & Pin Assignment
5
6
7
8
Q2
Q1
4
3
2
1
Pin 1: Source 2
Pin 2: Gate 2
Pin 3: Source 1
Pin 4: Gate 1
Pin 5 / 6: Drain 1
Pin 7 / 8: Drain 2
Description
The Advanced Power MOSFETS provide the designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and cost-effectiveness.
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
ID@TA=25℃
ID@TA=70℃
I
DM
P
D
T
stg
T
j
,
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current)
Continuous Drain Current
Drain Current (Pulsed)
*1
Total Power Dissipation @T
A
=25
o
C
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Ratings
60
±20
6.0
3.5
20
2.0
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
°C
°C
*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
*2: 1-in
2
2oz Cu PCB board
H4946DS & H4946DP
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
•
Static
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
Reference to 25℃, ID=1mA
V
GS
=10V, I
D
=5.0A
V
GS
=4.5V, I
D
=2.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
DS
=10V, I
D
=5.0A
1
60
Characteristic
Test Conditions
Min.
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 2/5
Typ.
Max.
Unit
V
0.06
41
55
3
1
±100
7.0
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
g
FS
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current (Tj=25°C)
Gate-Body Leakage Current
Forward Transconductance
V/℃
mΩ
V
uA
nA
S
•
Drain-Source Diode Characteristics
V
SD
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=1.6A
1.2
V
Note: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
H4946DS & H4946DP
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
25
25
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 3/5
T
a=25℃
ID,Drain current(A
20
15
10
5
0
0
1
2
3
)
V S,D
D rain-to-source V
oltage(V
4
0
0
Ta=150℃
ID,Drain current(
10V
6.0V
4.5V
20
15
10
10V
6.0V
4.5V
3.0V
3.0V
5
1
2
3
4
Fig 1.Typical O
utput
V
DS,Drain-to-source V
oltage(V
)
Fig 2.Typical Output Characteristics
50
70
46
Normalized RDA(O
60
50
40
30
20
10
0
-50
RDS(ON)(m
42
38
34
30
3
5
7
VGS,Gate-to-Source Voltage(V)
9
11
0
50
100
150
200
T
j,JunctionT p
em erature(℃
)
Fig 3.On-Resistance v ate Voltage
.s.G
Fig 4.N alizedO
orm
n-Resistance v.s.Junction
T
2.5
10
1
IS(A)
T
j=150
℃
2
T
j=25
℃
VGS(th)(V
1.5
1
0.1
0.5
0.01
0
0.2 0.4 0.6 0.8
1
1.2
VSD,Source-to-Drain Voltage(V)
1.4
0
-50
0
50
100
Tj,Junction Temperature(
℃
)
150
Fig 5.Forward Characteristic of Reverse Diode
Fig 6.Gate Threshold Voltage v.s.junction
H4946DS & H4946DP
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
DIP-8 Dimension
8
7
6
5
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 4/5
H4946DP
Marking:
A
1
2
3
4
B
F
J
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
Note: Green label is used for pb-free packing
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
C
E
D
G
H
α
1 K
M
L
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
α1
A
Min.
6.29
9.22
-
-
-
3.25
3.17
0.38
2.28
7.49
-
8.56
0.229
o
94
6.29
Max.
6.40
9.32
*1.52
*1.27
*0.99
3.35
3.55
0.53
2.79
7.74
*3.00
8.81
0.381
o
97
6.40
I
*: Typical, Unit: mm
8-Lead DIP-8
Plastic Package
HSMC Package Code: P
SOP-8 Dimension
A
G
H4946DS
Marking:
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Min.
4.85
3.85
5.80
1.22
0.37
3.74
1.45
4.80
0.05
0.30
0.19
0.37
0.23
0.08
0.00
Max.
5.10
3.95
6.20
1.32
0.47
3.88
1.65
5.10
0.20
0.70
0.25
0.52
0.28
0.13
0.15
8
B
7
6
5
C
4
J
H
I
Pin1 Index
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
Note: Green label is used for pb-free packing
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
2
3
D
E
Part A
K
L
N
O
Part A
M
*: Typical, Unit: mm
F
8-Lead SO-8 Plastic
Surface Mounted Package
HSMC Package Code: S
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
H4946DS & H4946DP
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C
±5
o
C
Dipping time
10sec
±1sec
10sec
±1sec
H4946DS & H4946DP
HSMC Product Specification
RF/Wirelessly
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