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H2N7002KSN

Description
60V 0.5AN channel transistor
CategoryDiscrete semiconductor   
File Size157KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

H2N7002KSN Overview

60V 0.5AN channel transistor

Features

Product Name: 60V 0.5AN channel transistor


N-Channel Transistor


Product model: H2N7002KSN


Product Description:


N-channel enhancement-mode MOS transistor.


ESD protected




parameter:


Channel: N


VDSS voltage: 60V


ID Current: 0.5A


VGS start voltage: ±20V


RDS (on) Max. on-resistance: 5ohm


RDS(on) @VGS : 10V


RDS(on) @ID:0.5A


ESD Protected :YES


ROSH: PF (lead-free) / HF (halogen-free)


Package:SOT-323


H2N7002KSN Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200809
Issued Date : 2008.11.18
Revised Date :2010.04.14
Page No. : 1/4
H2N7002KSN
N-CHANNEL TRANSISTOR
H2N7002KSN Pin Assignment & Symbol
3
2
3-Lead Plastic
SOT-323
Package Code: SN
Pin 1: Gate 2: Source 3: Drain
1
Description
N-channel enhancement-mode MOS transistor.
ESD protected
Absolute Maximum Ratings
Drain-Source Voltage ............................................................................................................................................ 60 V
Drain-Gate Voltage (R
GS
=1MΩ)............................................................................................................................. 60 V
Gate-Source Voltage ...........................................................................................................................................
±20
V
(1)
Continuous Drain Current (T
A
=25°C) ............................................................................................................. 200 mA
(1)
Continuous Drain Current (T
A
=100°C) ........................................................................................................... 115 mA
(2)
Pulsed Drain Current (T
A
=25°C) .................................................................................................................... 800 mA
Storage Temperature............................................................................................................................... -55 to 150
°C
Operating Junction Temperature ............................................................................................................. -55 to 150
°C
Lead Temperature, for 10 second Soldering ...................................................................................................... 260
°C
Gate Source ESD Rating……………………………………………………………………………………………….… 2KV
Electrical Characteristics
(T
A
=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage Current, Forward
Gate Source leakage Current, Reverse
Zero Gate Voltage Drain Current
On-State Drain Current
Static Drain-Source On-State Voltage
Symbol
BV
DSS
V
GS(th)
I
GSS/F
I
GSS/R
I
DSS
I
D(ON)
V
DS(ON)
Test Conditions
V
GS
=0, I
D
=10uA
V
DS
= V
GS
, I
D
=0.25mA
V
GS
=+20V, V
DS
=0
V
GS
=-20V, V
DS
=0
V
DS
=48V, V
GS
=0
V
DS
>2V
DS(ON)
, V
GS
=10V
I
D
=50mA, V
GS
=5V
I
D
=500mA, V
GS
=10V
I
D
=75mA, V
GS
=4.5V
Static Drain-Source On-State Resistance
Forward Transconductance
Turn-on Delay Time
Turn-off Delay Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
G
FS
t
d(on)
t
d(off)
C
iss
C
oss
C
rss
V
DS
=25V, V
GS
=0, f=1MHz
I
D
=50mA, V
GS
=5V
I
D
=500mA, V
GS
=10V
V
DS
>2V
DS(ON)
, I
D
=200mA
(V
DD
=50V, R
D
=250Ω,
V
GS
=10V, R
G
=50Ω)
-
-
80
-
-
-
-
-
-
-
-
20
40
50
25
5
Min
60
1
-
-
-
500
-
-
Typ.
-
-
-
-
-
-
-
-
Max
-
2.0
10
-10
10
-
0.375
3.75
5.3
5.0
5.0
-
-
-
Unit
V
V
uA
uA
uA
mA
V
V
Ω
Ω
Ω
mS
nS
nS
pF
pF
pF
(1)The Power Dissipation of the package may result in a continuous drain current.
(2)Pulse Width≤300us, Duty cycle≥2%.
H2N7002KSN
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