H12N65E datasheet, PDF - EEWORLD Datasheet

H12N65E: Description650V 12A N-channel power MOSFET; CategoryDiscrete semiconductor; File Size200KB，6 Pages; ManufacturerHI-SINCERITY MICROELECTRONICS CORP.

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H12N65E Overview

650V 12A N-channel power MOSFET

Features

Product Name: 650V 12A N-channel Power MOSFET

N-Channel Power MOSFET (650V, 12A)

Product model: H12N65E

product features:

H12N65 Series is a High voltage N Channel enhancement mode power MOSFET chip fabricated in advanced silicon epitaxial planar technology

Advanced termination scheme to provide enhanced voltageblocking capability

Avalanche Energy Specified

Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;

The packaged product is widely used in AC-DC power suppliers, DCDC converters and H bridge PWM motor drivers

Applications:

Switch Mode Power Supply

Uninterruptable Power Supply

High Speed Power Switching

parameter:

Channel: N

VDSS voltage: 650V

ID Current: 12A

VGS start voltage: ±30V

RDS (on) Max. on-resistance: 0.8ohm

RDS(on) @VGS : 10V

RDS(on) @ID：6A

ROSH: PF (lead-free)

Package：TO-220AB

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