HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date :2010.10.14
Page No. : 1/6
H04N60 Series
N-Channel Power Field Effect Transistor (600V, 4A)
Description
This advanced high voltage MOSFET is designed to withstand high energy in the
avalanche mode and switch efficiently. This new high energy device also offers a
drain-to-source diode with fast recovery time. Designed for high voltage, high
speed switching applications such as power suplies, converters, power motor
controls and bridge circuits.
H04N60 Series Pin Assignment
Tab
3
2
1
Tab
3-Lead Plastic
TO-263
Package Code: U
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
2
3
Features
•
Higher Current Rating
•
Lower R
DS(on)
<2.4Ω (@V
GS
=10V, I
D
=2A)
•
Lower Capacitances
•
Lower Total Gate Charge
•
Tighter VSD Specifications
•
Avalanche Energy Specified
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
1
2
3
D
G
S
H04N60 Series
Symbol:
Thermal Characteristics
Symbol
R
θ
JC
Parameter
TO-263
Thermal Resistance Junction to Case (Maximum)
TO-220AB
TO-220FP
R
θ
JA
Thermal Resistance Junction to Ambient (Maximum)
TO-220AB
TO-220FP
Value
1.7
1.25
3.79
62.5
120
°C/W
°C/W
Units
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise specified)
Symbol
V
DS
V
GS
I
D
I
DM
Drain to Source Voltage
Gate to Source Voltage (Continue)
Drain to Current (Continuous)
Drain to Current (Pulsed)
Total Power Dissipation (T
C
=25
o
C)
H04N60U (TO-263)
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Derate above 25°C
H04N60U (TO-263)
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-T
j
=25°C
*1
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
Parameter
Value
600
±30
4
16
110
100
33
0.58
0.8
0.26
-55 to 150
276
260
Units
A
V
A
A
W
P
D
W/°C
T
j
, T
stg
E
AS
T
L
°C
mJ
°C
*1: L=30mH, I
AS
=3.81A, V
DD
=175V, R
G
=25Ω, Starting T
J
=25
o
C
H04N60U, H04N60E, H04N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
C
=25°C, unless otherwise specified)
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
Characteristic
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V)
Gate-Source Leakage Current-Forward (V
gsf
=30V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-30V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=2A)
Forward Transconductance (V
DS
=15V, I
D
=2A)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
(V
DS
=480V, I
D
=4.4A, V
GS
=10V)
*2,*3
*2,*3
(V
DD
=300V, I
D
=4.4A, R
G
=25Ω)
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date :2010.10.14
Page No. : 2/6
Min.
600
-
-
-
2
-
2
-
Typ.
-
-
-
-
-
2
-
672
66
4.7
27
19
160
22
19.8
4
7.2
4.5
7.5
Max.
-
1
100
-100
4
2.4
-
-
-
-
-
-
Unit
V
uA
nA
nA
V
Ω
S
V
GS
=0V, V
DS
=25V, f=1MHz
-
-
-
-
-
-
-
-
-
-
-
pF
ns
-
-
-
-
-
-
-
nH
nH
nC
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
on
t
rr
Q
rr
Characteristic
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Forward On Voltage
Forward Turn-On Time
Reverse Recovery Time
Reverse Recovery Charge
I
S
=4A, V
GS
=0V, d
IF
/d
t
=100A/us
*2
I
S
=4A, V
GS
=0V, T
J
=25 C
o
Min.
-
-
-
-
-
-
Typ.
-
-
-
**
300
2.2
Max.
4
16
1.4
-
-
-
Units
A
A
V
ns
ns
uC
**: Negligible, Dominated by circuit inductance
*2: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
*3: Essentially independent of operating temperature
H04N60U, H04N60E, H04N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
On-Region Characteristic
100
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date :2010.10.14
Page No. : 3/6
Capacitance Characteristics
1200
I
D
, Drain-Source Current (A)
10
Capacitance (pF)
V
GS
=15V
V
GS
=10V
V
GS
=8V
V
GS
=6V
V
GS
=5V
V
GS
=4.5V
Ciss
1000
800
Coss
600
1
400
Crss
200
0.1
0.1
1
10
100
0
0.1
1
10
100
V
DS
, Drain-Source Voltage (V)
V
DS
, Deain-Source Voltage (V)
Typical On-Resistance & Drain Current
10.0
Drain Current Variation with
Gate Voltage and Temperature
100.0
R
DS(ON)
, Drain-Source On-Resistance
8.0
V
DS
=50V, 250us Pulse Test
I
D
, Drain-Source Current (A)
V
GS
=10V
6.0
10.0
V
GS
=20V
4.0
150
o
C
1.0
2.0
25
o
C
0.1
-55
o
C
0.0
0
2
4
6
8
10
12
0
2
4
6
8
10
I
D
, Drain Current (A)
V
GS
, Gate-Source Voltage (V)
On Resistance Variation with Temperature
2.8
Safe Operating Area
100
R
DS(ON)
, Normalized Drain-Source
On-Resistance
2.4
PT=10ms PT=1ms PT=100us
10
2.0
I
D
, Drain Current (A)
1.6
1
DC
1.2
V
GS
=10V, I
D
=2A
0.8
0.1
Operation in This Area is Limited by R
DS(on)
T
C
=25
o
C, T
J
=150
o
C, Single Pulse
0.01
-75
-50
-25
0
25
50
75
100
125
150
175
0.4
1
10
100
1000
Junction Temperature, T
J
(
o
C)
V
DS
, Drain-Source Voltage (V)
H04N60U, H04N60E, H04N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Gate Charge Waveforms
12
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date :2010.10.14
Page No. : 4/6
Body Diode Forward Voltage Variations,Source
Current and Temperature
10.0
V
DS
=120V
10
8
V
DS
=300V
I
S
, Reverse Drain Current (A)
V
GS
(V)
6
150
o
C
1.0
25
o
C
4
V
DS
=480V
2
I
D
=4A
0
0
4
8
12
16
20
24
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Q, Gate Charge (nC)
V
SD
,Source-to-Drain Voltage(V)
Breakdown Voltage vs Temperature
1.2
V
DSS
, Drain-Source Breakdown Voltage
( Normalized)
1.1
1.0
0.9
V
GS
=0V,I
D
=250uA
0.8
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, Junction Temperature (
o
C)
H04N60U, H04N60E, H04N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
F
Pb Free: "
.
"
Halogen Free: "
.
"
Normal: None
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date :2010.10.14
Page No. : 5/6
H
0 4N60
E
H
I
G
Tab
P
L
J
M
3
2
1
O
N
K
Date Code
Control Code
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Note: a. Green label is used for pb-free packing
b. Green label and GP logo are used for
halogen free packing
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
3.56
0.51
0.35
2.03
9.65
-
-
3.00
0.38
2.54
1.14
-
12.70
14.22
Max.
7.49
9.65
4.83
1.40
0.61
2.92
10.67
*18.73
*3.83
6.35
1.02
3.43
1.78
*2.54
14.73
16.51
*: Typical, Unit: mm
TO-220FP Dimension
A
Marking:
α
4
E O
C
Pb Free: "
.
"
Halogen Free: "
.
"
Normal: None
α
1
D
α
2
α
3
α
5
Date Code
H
0 4N60
F
Control Code
G
3
F
2
I
N
J
Pin Style: 1.Gate 2.Drain 3.Source
Note: a. Green label is used for pb-free packing
b. Green label and GP logo are used for
halogen free packing
K
1
M
L
DIM
A
C
D
E
F
G
I
J
K
L
M
N
O
α1/2/4/5
α3
Min.
6.20
4.35
2.34
0.405
9.80
2.60
2.70
0.50
2.34
12.08
15.30
0.90
2.00
-
-
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.70
16.20
1.47
2.96
o
*5
o
*27
*: Typical, Unit: mm
TO-263 Dimension
Marking:
DIM
A
b
L4
c
L3
L1
E
c2
b2
D
e
L
a1
L2
Min.
4.40
0.76
0.00
0.36
*1.50
2.29
9.80
1.25
1.17
8.60
*2.54
14.60
o
0
*1.27
Max.
4.80
1.00
0.30
0.50
-
2.79
10.40
1.45
1.47
9.00
-
15.80
o
8
-
b
3
E
2
e
1
L2
D
L
c
A
c2
L1
L4
a1
L3
b2
Pb Free: "
.
"
Halogen Free: "
.
"
Normal: None
H
U
0 4N6 0
Date Code
Control Code
Pin Style: 1.Gate 2.Drain 3.Source
Note: a. Green label is used for pb-free packing
b. Green label and GP logo are used for
halogen free packing
*: REF., Unit: mm
H04N60U, H04N60E, H04N60F
HSMC Product Specification
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