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H02N60J: Description600V 2A N-channel power field effect transistor; CategoryDiscrete semiconductor; File Size86KB，7 Pages; ManufacturerHI-SINCERITY MICROELECTRONICS CORP.

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H02N60J Overview

600V 2A N-channel power field effect transistor

Features

Product Name: 600V 2A N-channel Power Field Effect Transistor

N-Channel Power Field Effect Transistor

Product model: H02N60J

Product Description:

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

product features:

Robust High Voltage Termination

Avalanc he Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

IDSS and VDSS（ON） Specified at Elevated Temperature

parameter:

Channel: N

VDSS voltage: 600V

ID Current: 2A

VGS start voltage: ±30V

RDS (on) Max. on-resistance: 4.4ohm

RDS(on) @VGS : 10V

RDS(on) @ID：1A

ROSH: PF (lead-free)

Package：TO-252

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200403

Issued Date : 2004.07.01

Revised Date : 2005.09.28

Page No. : 1/7

H02N60 Series

N-Channel Power Field Effect Transistor

H02N60 Series Pin Assignment

Tab

3-Lead Plastic

TO-252

Package Code: J

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

3-Lead Plastic

TO-251

Package Code: I

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

Description

This high voltage MOSFET uses an advanced termination scheme to

provide enhanced voltage-blocking capability without degratding

performance over time. In addition, this advanced MOSFET is designed to

withstand high energy in avalanche and commutation modes. The new

energy efficient design also offers a drain-to-source diode with a fast

recovery time. Designed for high voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where diode

speed and commutating safe operating areas are critical and offer

additional and saafety margin against unexpected voltage transients.

Tab

3-Lead Plastic

TO-220AB

Package Code: E

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

Features

•

Robust High Voltage Termination

•

Avalanc he Energy Specified

•

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast

Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

•

DSS

and V

DS(on)

Specified at Elevated Temperature

3-Lead Plastic

TO-220FP

Package Code: F

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

H02N60 Series

Symbol:

Absolute Maximum Ratings

Symbol

Parameter

Drain to Current (Continuous)

Drain to Current (Pulsed)

Gate-to-Source Voltage (Continue)

Total Power Dissipation (T

=25

H02N60I (TO-251) / H02N60J (TO-252)

H02N60E (TO-220AB)

H02N60F (TO-220FP)

Derate above 25°C

H02N60I (TO-251) / H02N60J (TO-252)

H02N60E (TO-220AB)

H02N60F (TO-220FP)

, T

stg

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C

=100V, V

=10V, I

=2A, L=10mH, R

=25Ω)

Maximum Lead Temperature for Soldering Purposes, 1/8”

from case for 10 seconds

0.4

0.33

-55 to 150

260

Value

±30

Units

W/°C

°C

H02N60I, H02N60J, H02N60E, H02N60F

HSMC Product Specification

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