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GS1002FL

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size241KB,3 Pages
ManufacturerNanjing International Group Co.,Ltd
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GS1002FL Overview

1 A, 200 V, SILICON, SIGNAL DIODE

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GS1001FL
THRU
GS1010FL
1.0
Ampere
Silion
Rectifier
Features



Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Low Leakage Current
Glass Passivated Junction
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL rating 1
1.0
Ampere
Silion
Rectifier
50 to 1000
Volts
SOD-123FL
A
B
Maximum Ratings



Operating Temperature(Tj): -65 to +175
Storage Temperature(T
STG
): -65 to +175
Typical Thermal Resistance(R
thJA
): 50 /W
Maximum
Maximum
Recurrent
MCC
Device
RMS
Part Number Marking Peak Reverse
Voltage
Voltage
GS1001FL
A1
50V
-
35V
-
GS1002FL
A2
100V
-
70V
GS1003FL
A3
200V
140V
GS1004FL
A4
400V
280V
GS1006FL
A5
600V
420V
GS1008FL
A6
800V
560V
GS1010FL
A7
1000V
700V
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Full Load
Reverse Current
Average ,Full Cycle
9.5mm Lead Length
Typical Junction
Capacitance
Note:
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
C
E
H
D
G
Electrical Characteristics @ 25
-
-
-
I
F(AV)
I
FSM
Unless Otherwise Specified
1.0 A
30.0A
-
-
-
1.1V-
T
A
= 75
8.3ms, half sine
T
A
= 25
I
F
=1A
DIM
A
B
C
D
E
G
H
V
F
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.140
.152
3.55
3.85
.100
.112
2.55
2.85
.055
.071
1.40
1.80
.037
.053
0.95
1.35
.020
.039
0.50
1.00
.010
-----
0.25
-----
-----
.008
----
.20
SUGGESTED SOLDER
PAD LAYOUT
0.093”
NOTE
I
R
-
5.0PA
-
T
A
= 25
-
50uA-----T
A
=100
-
-
-
30uA
I
R
T
L
=75
0.048”
C
J
15pF
Measured at
1.0MHz, V
R
=4.0V
0.036”
1.
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