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GR1AB

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size817KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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GR1AB Overview

Rectifier Diode,

GR1AB Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-C2
Reach Compliance Codeunknown
Is SamacsysN
Other featuresFREE WHEEELING DIODE
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage50 V
Maximum reverse current5 µA
Maximum reverse recovery time0.15 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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GR1AB THRU GR1MB
Surface Mount Fast Recovery Rectifier
Features
RoHS
COMPLIANT
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Fast reverse recovery time
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °
C
Typical Applications
For use in high frequency rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer and telecommunication.
Mechanical Data
Package:
DO-214AA (SMB
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, resistance load, TL (Fig.1)
Surge(non-repetitive)forward current
@60Hz half-sine wave,1 cycle, Ta=25℃
Storage temperature
Junction temperature
VRRM
IO
V
A
SYMBOL
UNIT
GR1AB
GR1AB
50
GR1BB
GR1BB
100
GR1DB
GR1DB
200
GR1GB
GR1GB
400
1.0
GR1JB
GR1JB
600
GR1KB
GR1KB
800
GR1MB
GR1MB
1000
IFSM
Tstg
Tj
A
30
-55~+150
-55~+150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum reverse recovery time
SYMBOL
UNIT
TEST
GR1AB GR1BB GR1DB GR1GB GR1JB GR1KB GR1MB
CONDITIONS
IFM=1.0A
I
F
=0.5A,I
R
=1.0A,
I
rr
=0.25A
Ta =25℃
IRRM
μA
Ta =125℃
100
VF
V
1.3
t
rr
ns
150
5.0
250
500
Maximum DC reverse current
at rated DC blocking voltage
per diode @ VRM=VRRM
1/5
S-S933
Rev.1.2,20-Oct-16
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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