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GQZJ3.9AT/R7

Description
Zener Diode, 3.88V V(Z), 3.48%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, QUADROMELF-2
CategoryDiscrete semiconductor    diode   
File Size95KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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GQZJ3.9AT/R7 Overview

Zener Diode, 3.88V V(Z), 3.48%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, QUADROMELF-2

GQZJ3.9AT/R7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeMELF
package instructionO-GELF-R2
Contacts2
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-GELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialCERAMIC, GLASS-SEALED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage3.88 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance3.48%
Working test current5 mA
Base Number Matches1

GQZJ3.9AT/R7 Preview

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DATA SHEET
GQZJ2.0~GQZJ56
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.0 to 56 Volts
POWER
500 mWatts
QUADRO-MELF
Unit : inch (mm)
FEATURES
• Planar Die construction
• 500mW Power Dissipation
In compliance with EU RoHS 2002/95/EC directives
67
.0
(1
.7
• Ideally Suited for Automated Assembly Processes
)
MECHANICAL DATA
• Case: Molded Glass QUARDRO-MELF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.03 grams
• Mounting Position: Any
• Packing information
T/R - 2.5K per 7" plastic Reel
.020(0.5)
.012(0.3)
.146(3.7)
.130(3.3)
.020(0.5)
.012(0.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
O
Symbol
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
S
C
C
O
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 100mA
Symbol
Mi n.
--
--
Typ.
Max.
0.3
1
Uni ts
K/mW
V
RthA
VF
--
--
Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.
STAD-JAN.27.2004
.063(1.6)
.055(1.4)DIA.
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