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GPJ25J

Description
SINGLE-PHASE BRIDGE RECTIFIER
CategoryDiscrete semiconductor    diode   
File Size102KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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GPJ25J Overview

SINGLE-PHASE BRIDGE RECTIFIER

GPJ25J Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant
ECCN codeEAR99
Base Number Matches1

GPJ25J Preview

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GPJ25A~GPJ25M
SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE
50 to 1000 Volts
CURRENT
25 Ampere
FEATURES
• Diffused Junction
• Low Forward Voltage Drop
• High Current Capability
• High Reliability
• High Surge Current Capability
• Ideal for Printed Circuit Boards
• Pb free product are available : 99% Sn above can meet RoHS
environment substance directive request
MECHANICALDATA
Case: Molded plastic body
Terminals: Plated Leads Solderable per MIL-STD-750, Method 2026
Polarity: As Marked on Body
Weight: 7.056 grams (approx.)
Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Single Phase, half wave, 60Hz, resistive or inductive load.
For Capacitive load derate current by 20%.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a x i m u m R M S B r i d g e In p u t V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
A ve r a g e R e c t i f i e d O ut p ut C ur r e nt a t T
C
= 1 0 0
O
C
I
2
t R a t i n g f o r f u s i n g ( t < 8 . 3 m s )
P e a k F o r w a r d S ur g e C ur r e nt s i ng l e s i ne - w a ve s up e r i m p o s e d o n
r a t e d l o a d ( J E D E C m e t ho d )
M a x i m u m In s t a n t a n e o u s F o r w a r d V o l t a g e D r o p p e r e l e m e n t a t 1 2 . 5 A
M a xi m um R e ve r s e L e a k a g e C ur r e nt a t R a t e d @ T
A
= 2 5
O
C
D c B l o c k i ng Vo l t a g e @ T
C
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e p e r l e g ( N o t e 1 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L G P J 2 5 A G P J 2 5 B G P J 2 5 D G P J 2 5 G G P J 2 5 J G P J 2 5 K G P J 2 5 M U N I T S
V
RRM
V
RMS
V
DC
I
F ( A V )
I
2
t
I
F S M
V
F
I
R
R
θ
J C
50
35
50
100
70
100
200
140
200
400
280
400
25
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
2
sec
A
V
uA
O
500
350
1 .1
10
500
0 .6
-5 5 to + 1 5 0
C /W
T
J
,T
S T G
O
C
NOTES:
1. Device mounted on 220 x 220 x 1.6mm thick AL plate heatsink.
STAD-AUG.23.2005
PAGE . 1
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