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GPJ20M

Description
SINGLE-PHASE BRIDGE RECTIFIER
CategoryDiscrete semiconductor    diode   
File Size99KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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GPJ20M Overview

SINGLE-PHASE BRIDGE RECTIFIER

GPJ20M Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant
ECCN codeEAR99
Base Number Matches1

GPJ20M Preview

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GPJ20A~GPJ20M
SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE
50 to 1000 Volts
CURRENT
Recognized File #E157705
FEATURES
• Diffused Junction
• Low Forward Voltage Drop
• High Current Capability
• High Reliability
• High Surge Current Capability
• Ideal for Printed Circuit Boards
• Pb free product are available : 99% Sn above can meet RoHS
environment substance directive request
20 Ampere
MECHANICALDATA
• Case: Molded plastic body
• Terminals: Plated Leads Solderable per MIL-STD-750, Method 2026
• Polarity: As Marked on Body
• Weight: 7.056 grams (approx.)
• Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Single Phase, half wave, 60Hz, resistive or inductive load.
For Capacitive load derate current by 20%.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a x i m u m R M S B r i d g e In p u t V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
A ve r a g e R e c t i f i e d O ut p ut C ur r e nt a t T
C
= 1 0 0
O
C
I
2
t R a t i n g f o r f u s i n g ( t < 8 . 3 m s )
P e a k F o r w a r d S ur g e C ur r e nt s i ng l e s i ne - w a ve s up e r i m p o s e d o n
r a t e d l o a d ( J E D E C m e t ho d )
M a x i m u m In s t a n t a n e o u s F o r w a r d V o l t a g e D r o p p e r e l e m e n t a t 1 2 . 5 A
M a xi m um R e ve r s e L e a k a g e C ur r e nt a t R a t e d @ T
A
= 2 5
O
C
D c B l o c k i ng Vo l t a g e @ T
C
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e p e r l e g ( N o t e 1 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L G P J 2 0 A G P J 2 0 B G P J 2 0 D G P J 2 0 G G P J 2 0 J G P J 2 0 K G P J 2 0 M U N I T S
V
RRM
V
RMS
V
DC
I
F ( A V )
I
2
t
I
F S M
V
F
I
R
R
θ
J C
50
35
50
100
70
100
200
140
200
400
280
400
20
500
350
1 .1
10
500
0 .6
-5 5 to + 1 5 0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
2
sec
A
V
uA
O
C /W
T
J
,T
S T G
O
C
NOTES:
1. Device mounted on 220 x 220 x 1.6mm thick AL plate heatsink.
STAD-FEB.18.2006
PAGE . 1
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