GDZJ8.2C-35T/B datasheet, PDF - EEWORLD Datasheet

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GDZJ8.2C-35T/B: DescriptionZener Diode, 8.24V V(Z), 2.5%, 0.5W; CategoryDiscrete semiconductor diode; File Size69KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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GDZJ8.2C-35T/B Overview

Zener Diode, 8.24V V(Z), 2.5%, 0.5W

GDZJ8.2C-35T/B Parametric

Parameter Name	Attribute value
Maker	PANJIT
Reach Compliance Code	compliant
Configuration	SINGLE
Diode type	ZENER DIODE
Maximum dynamic impedance	20 Ω
Number of components	1
Maximum operating temperature	175 °C
Maximum power dissipation	0.5 W
Nominal reference voltage	8.24 V
surface mount	NO
Maximum voltage tolerance	2.5%
Working test current	5 mA
Base Number Matches	1

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DATA SHEET

GDZJ2.0~GDZJ56

AXIAL LEAD ZENER DIODES

VOLTAGE

2.0 to 56 Volts

POWER

500 mWatts

DO-35

Unit: inch (mm)

FEATURES

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

• Both normal and Pb free product are available :

Normal : 80~95% Sn, 5~20 Pb

Pb free: 98.5% Sn above

.153(3.9)MAX.

1.02(26.0)MIN.

• Planar Die construction

.020(0.52)TYP.

MECHANICAL DATA

• Case: Molded Glass DO-35

• Terminals: Solderable per MIL-STD-202, Method 208

• Polarity: See Diagram Below

• Approx. Weight: 0.13 grams

• Mounting Position: Any

• Ordering information: Suffix : “ -35 ” to order DO-35 Package

• Packing information

- 2K per Bulk box

T/R - 10K per 13" plastic Reel

T/B - 5K per horiz. tape & Ammo box

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

P ar m et r

P ow erD i si aton atTam b = 25

s p i

Juncton Tem per t r

aue

S t r ge Tem per t r R ange

aue

S ym bol

1.02(26.0)MIN.

.079(2.0)MAX.

Val e

500

175

- 5 t +175

6 o

U nis

TO T

Vald pr vi ed t atl ads ata di t nce of10m m fom case ar keptatam bi ntt m per t r .

i o d

h e

e e

aue

P ar m et r

Ther alR esi t nce Juncton t A m bi ntA i

i o

For ar Volage atI = 100m A

w d

S ym bol

M i.

Typ.

M ax.

U nis

K/ W

Rt A

Vald pr vi ed t atl ads ata di t nce of10m m fom case ar keptatam bi ntt m per t r .

i o d

h e

e e

aue

STAD-FEB.17.2004

PAGE . 1

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