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GC11N65T

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 11A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 360mΩ @ 5.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 78W(Tc) Type: N-channel 650V 11A 360mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size2MB,7 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
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GC11N65T Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 11A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 360mΩ @ 5.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 78W(Tc) Type: N-channel 650V 11A 360mΩ@10V

GC11N65T Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C11A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance360mΩ @ 5.5A,10V
Maximum power dissipation (Ta=25°C)78W(Tc)
typeN channel
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