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GBU10005

Description
Single Phase 10A Silicon Bridge Rectifiers Single Phase 10A Silicon Bridge Rectifiers
CategoryDiscrete semiconductor   
File Size545KB,1 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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GBU10005 Overview

Single Phase 10A Silicon Bridge Rectifiers Single Phase 10A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 10A Silicon Bridge Rectifiers


Product model: GBU10005


product features:


Surge overload rating -250~400 amperes peak



Ideal for printed circuit board



Reliable low cost construction utilizing molded plastic technique



Plastic material has Underwriters Laboratory Flammability Classification 94V-0



Mounting position:Any



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.


Single phase, half wave, 50 Hz, resistive or inductive load.


For capacitive load, derate current by 20%



product data:


Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 50V



Maximum RMS Voltage VRMS voltage effective value: 35V



Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 50V



Maximum Average Forward Rectified Current @TC=100℃ IF(AV) Maximum forward current: 10 A



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 250 A



Maximum Instantaneous Forward Voltage Drop Per Leg @ 6.0A/7.5A VF Maximum forward voltage drop: 1.1 V



Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 5.0μA


DC blocking voltage @TA= 125℃ IR Maximum reverse leakage current: 500μA



(I^2)t Rating for fusing (t<8.3ms) (I^2)t :200 (A^2)S



Typical Junction Capacitance per Leg CJ :70 pF



Typical Thermal Resistance (Note) RθJC Thermal resistance coefficient: 2.2 ℃/W



Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃



Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃



Package: GBU


GBU10005 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current175 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage50 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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