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GBP200

Description
2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size32KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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GBP200 Overview

2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

GBP200 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current60 A
Number of components4
Maximum operating temperature150 °C
Maximum output current2 A
Maximum repetitive peak reverse voltage50 V
surface mountNO
Base Number Matches1

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DATA SHEET
GBP200~GBP2010
IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE
50 to 1000 Volts
CURRENT
2.0 Amperes
GBP
Unit: inch (mm)
Recognized File #E228882
FEATURES
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-O
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded plastic technique
• Surge overload rating : 60 Amperes peak
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.577(14.65)
.557(14.15)
.099(2.5)
.082(2.1)
C .111(2.8)
.581(14.75)
.561(14.25)
.044(1.1)
.031(0.8)
.144(3.65)
.131(3.35)
.414(10.5)
.397(10.1)
.057(1.45)
.045(1.15)
MECHANICALDATA
Terminals: Leads solderable per MIL-STD-202,
Method 208
Mounting position: Any
Weight: 0.06 ounce, 1.7 grams
.160(4.06)
.140(3.56)
.160(4.06)
.140(3.56)
.034(0.86)
.026(0.66)
.026(0.65)
.013(0.35)
.160(4.06)
.140(3.56)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a x i m u m R M S B r i d g e In p u t V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d R e c t i f i e d O ut p ut C ur r e nt a t T
A
= 5 0
O
C
I
2
t R a t i n g f o r f u s i n g ( t < 8 . 3 m s )
P e a k F o r w a r d S ur g e C ur r e nt s i ng l e s i ne - w a ve s up e r i m p o s e d o n
r a t e d l o a d ( J E D E C m e t ho d )
M a x i m u m In s t a n t a n e o u s F o r w a r d V o l t a g e D r o p p e r e l e m e n t a t 1 . 0 A
M a xi m um R e ve r s e L e a k a g e C ur r e nt a t R a t e d @ T
A
= 2 5
O
C
D c B l o c k i ng V o l t a g e @ T
A
= 1 0 0
O
C
Ty p i c a l J u n c t i o n C a p a c i t a n c e p e r l e g ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e p e r l e g ( N o t e 2 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L G B P 2 0 0
G B P 2 0 1 G B P 2 0 2 G B P 2 0 4 G B P 2 0 6 G B P 2 0 8 G B P 2 0 1 0 U N IT S
100
70
100
200
140
200
400
280
400
2 .0
1 5 .0
60
1 .0
5 .0
500
25
32
13
-5 5 to + 1 5 0
O
V
RRM
V
RMS
V
DC
I
AV
I
2
t
I
F S M
V
F
I
R
C
J
Rθ J A
Rθ J L
50
35
50
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
2
s e c
A
Vpk
uA
pF
C /W
T
J
,T
S TG
O
C
NOTES:
1. Measured at 1.0MHZ and applied reverse voltage of 4.0 volts
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with 0.47 x 0.47"(12 x 12mm)copper pads.
STAD-JUN.17.2004
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