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GBLC03C

Description
Reverse shutdown voltage (typ): 3V Breakdown voltage (min): 4V Polarity: - Clamping voltage: 13.9V Peak pulse current (10/1000us): 8A
CategoryDiscrete semiconductor    TVS diode   
File Size1MB,4 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
Download Datasheet Parametric View All

GBLC03C Overview

Reverse shutdown voltage (typ): 3V Breakdown voltage (min): 4V Polarity: - Clamping voltage: 13.9V Peak pulse current (10/1000us): 8A

GBLC03C Parametric

Parameter NameAttribute value
Reverse shutdown voltage (typ)3V
Breakdown voltage (minimum value)4V
polarity-
clamping voltage13.9V
Peak pulse current (10/1000us)8A

GBLC03C Preview

Download Datasheet
GBLCxxC
Series
Bi-directional Ultra Low
Capacitance TVS
Array
SOD-323 Plastic-Encapsulate
ESD
Protection
Diodes
DESCRIPTION
The GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to
protect applications such as portable electronics and SMART phones. This series is available in both
unidirectional and bidirectional configurations and is rated at 300 Watts for an 8/20μs wave shape.
The GBLCxxC and Series meets IEC 61000-4-2 (ESD) and IEC 61000-4-4 (EFT) requirements. At
higher operating frequencies or faster edge rates, insertion loss and signal integrity are a major concern.
This series offers a ultra low capacitance and low leakage current in a miniature SOD-323 package.
Features
Peak Power Dissipation 300W (8/20μs)
IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC61000-4-4 (EFT) 40A (5/50ns)
IEC61000-4-5 (Lightning) 12A (8/20μs)
Protects one I/O line (bidirectional)
Low clamping voltage
Working voltages : 3V, 5V, 8V, 12V, 15V, 24V
Response Time is < 1 ns
Meets MSL 1 Requirements
Pin
Configuration
Circuit Diagram
Applications
Mechanical Characteristics
Package: SOD-323
Flammability Rating: UL 94V-0
High temperature soldering guaranted:
260℃/10s
Packaging: Tape and Reel
Cell Phone Handsets and Accessories
Microprocessor based equipment
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
Peripherals
USB Interface
Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Parameter
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Peak Pulse Power(tp=8/20us waveform)
Operating Temperature
Storage Temperature
Lead Solder Temperature – Maximum (10 Second
Duration)
The above data are for reference only.
DN:T20317A0
Symbol
V
ESD
P
PP
T
OPT
T
STG
T
L
Value
± 15
±8
300
−55 to +150
−55 to +150
260(10 sec.)
Unit
kV
W
°C
°C
°C
http://www.microdiode.com
Rev:2020A0
Page :1
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