GBJ808 datasheet, PDF - EEWORLD Datasheet

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GBJ808: DescriptionSingle Phase 8.0A Silicon Bridge Rectifiers Single Phase 8.0A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor; File Size99KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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GBJ808 Overview

Single Phase 8.0A Silicon Bridge Rectifiers Single Phase 8.0A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 8.0A Silicon Bridge Rectifiers

Product model: GBJ808

product features:

UL Recognized File # E-230084

Rating to 1000V PRV

Ideal for printed circuit board

Low forward voltage drop,high current capability

Reliable low cost construction utiliaing molded plastic technique results in inexpensive product

The plastic material has UL Flammablilty Classification 94V-0

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 50 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 800V

Maximum RMS Voltage VRMS Voltage effective value: 560V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 800V

Maximum Average Forward (with heatsink Note 2) Rectified Current @TC = 100℃ (with heatsink) IF(AV) Maximum forward current: 8.0 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 170 A

Maximum Instantaneous Forward Voltage Drop Per Leg @ 3.0A/4.0A/5.0A VF Maximum forward voltage drop: 1.0/1.0/1.05 V

Maximum DC Reverse Current TJ=25℃ IR Maximum reverse leakage current: 5.0μA

At Rated DC blocking voltage TJ = 125℃ IR Maximum reverse leakage current: 500μA

(I^2)t Rating for fusing (t<8.3ms) (I^2)t ：120 (A^2)S

Typical Junction Capacitance per Leg (Note1) CJ ：55 pF

Typical Thermal Resistance (Note2) R*JC ：1.8/1.6/1.4 ℃/W

Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃

Package: KBJ6

GBJ808 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	170 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	8 A
Maximum repetitive peak reverse voltage	800 V
surface mount	NO

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