GBJ608 datasheet, PDF - EEWORLD Datasheet

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GBJ608: DescriptionSingle Phase 6.0A Silicon Bridge Rectifiers Single Phase 6.0A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor; File Size99KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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GBJ608 Overview

Single Phase 6.0A Silicon Bridge Rectifiers Single Phase 6.0A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 6.0A Silicon Bridge Rectifiers

Product model: GBJ608

product features:

UL Recognized File # E-230084

Rating to 1000V PRV

Ideal for printed circuit board

Low forward voltage drop,high current capability

Reliable low cost construction utiliaing molded plastic technique results in inexpensive product

The plastic material has UL Flammablilty Classification 94V-0

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 50 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 800V

Maximum RMS Voltage VRMS Voltage effective value: 560V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 800V

Maximum Average Forward (with heatsink Note 2) Rectified Current @TC = 100℃ (with heatsink) IF(AV) Maximum forward current: 6.0 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 170 A

Maximum Instantaneous Forward Voltage Drop Per Leg @ 3.0A/4.0A/5.0A VF Maximum forward voltage drop: 1.0/1.0/1.05 V

Maximum DC Reverse Current TJ=25℃ IR Maximum reverse leakage current: 5.0μA

At Rated DC blocking voltage TJ = 125℃ IR Maximum reverse leakage current: 500μA

(I^2)t Rating for fusing (t<8.3ms) (I^2)t ：120 (A^2)S

Typical Junction Capacitance per Leg (Note1) CJ ：55 pF

Typical Thermal Resistance (Note2) R*JC ：1.8/1.6/1.4 ℃/W

Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃

Package: KBJ6

GBJ608 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
Maximum non-repetitive peak forward current	150 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	6 A
Maximum repetitive peak reverse voltage	800 V
surface mount	NO

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GBJ6005 THRU GBJ610

桥式整流器

Bridge Rectifier

■特征

Features

●

■外½尺寸和印记

HOLE FOR NO.

6 SCREW

1.193(30.3)

1.169(29.7)

Outline Dimensions and Mark

6KBJ

.189(4.8)

.173(4.4)

.150(3.8)

.134(3.4)

.122(3.1)

RRM

50V~1000V

●

玻璃钝化芯片

Glass passivated chip

●

耐正向浪涌电流½力高

High surge forward current capability

DIA

.800(20.3)

.776(19.7)

.441(11.2)

.425(10.8)

■用途

Applications

●

.106(2.7)

.096(2.3)

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

.228(5.8)

.189(4.8)

.165(4.2)

.150(3.8)

½一般电源单相桥式整流用

General purpose 1 phase Bridge

rectifier applications

.153(3.9)

.134(3.4)

.708(18.0)

.669(17.0)

.402(10.2)

.386(9.8)

.303(7.7) .303(7.7)

.287(7.3) .287(7.3)

.031(0.8)

.023(0.6)

■极限值（绝对最大额定值）

Limiting Values（Absolute Maximum Rating）

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse

Voltage

平均整流输出电流

Average Rectified Output

Current

正向（不重复）浪涌电流

Surge(Non-

repetitive)Forward Current

正向浪涌电流的平方对电流

浪涌持续时间的积分值

Current Squared Time

存储温度

Storage Temperature

结温

Junction Temperature

绝缘耐压

Dielectric Strength

安装扭矩

Mounting Torque

符号

Symbol

RRM

单½

Unit

Dimensions in inches and (millimeters)

条件

Conditions

GBJ6

005 01

50 100 200 400 600 800 1000

60Hz正弦波，

用散热片

=110℃

电阻负½½

With heatsink T

=110℃

60Hz sine wave,

无散热片

=25℃

R-load

Without heatsink T

=25℃

60H

正弦波，一个周期，T

=25℃

60H

sine wave, 1 cycle, T

=25℃

1ms≤t<8.3ms Tj=25℃，单个二极管

1ms≤t<8.3ms Tj=25℃，Rating of per diode

2.8

150

FSM

℃

kg·

-55 ~+150

stg

dis

Tor

端子与外壳之间外加交流电，一分钟

Terminals to case，AC 1 minute

推荐值：5kg·cm

Recommend torque：5kg·cm

2.5

■电特性（T

a=25℃

除非另有规定）

Electrical Characteristics

（T

=25℃ Unless otherwise specified）

参数名称

Item

正向峰值电压

Peak Forward Voltage

反向峰值电流

Peak Reverse Current

热阻

Thermal Resistance

符号

Symbol

RRM

J-A

℃/W

J-C

单½

Unit

μA

测试条件

Test Condition

=3A,

脉冲测试，单个二极管的额定值

=3A, Pulse measurement, Rating of per diode

RRM

,脉冲测试，单个二极管的额定值

RRM

, Pulse measurement, Rating of per diode

结和环境之间，无散热片

Between junction and ambient, Without heatsink

结和管壳之间，用散热片

Between junction and case, With heatsink

最大值

Max

1.05

3.4

Document Number 0048

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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