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GBJ25005

Description
Single Phase 25A Silicon Bridge Rectifiers Single Phase 25A Silicon Bridge Rectifiers
CategoryDiscrete semiconductor   
File Size100KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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GBJ25005 Overview

Single Phase 25A Silicon Bridge Rectifiers Single Phase 25A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 25A Silicon Bridge Rectifiers


Product model: GBJ25005


product features:


Ul Recognized File # E-230084


Rating to 1000v PRV


Ideal for printed circuit board


Low forward voltage drop high current capablilty


Reliable low cost construction utilizing molded plastic technique results in inexpensive product


The plastic material has UL flammability



Maximum Ratings and Electrical Characteristics:


TA = 25℃ unless otherwise specified



product data:


Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 50V



Maximum RMS Voltage VRMS voltage effective value: 35V



Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 50V



Average Rectified Output Current 50Hz sine wave ,R-load :


With Heatsink Tc = 100℃ Io :25.0 A


Without Heatsink Ta = 25℃ Io :4.2 A



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM Maximum forward surge current: 400 A



Maximum Instantaneous Forward Voltage @ 12.5A VF Maximum forward voltage drop: 1.1 V



Maximum DC Reverse Current @ TA = 25 ° C IR Maximum reverse leakage current: 5.0 μA


rated DC blocking voltage per leg TA = 125℃ IR Maximum reverse leakage current: 500μA



(I^2)t Rating for fusing (t<8.3ms) (I^2)t :510 (A^2)S



Typical Junction Capacitance per Leg (Note1) CJ :85 pF



Typical Thermal Resistance (Note) RθJC Thermal resistance coefficient: 0.7℃/W



Maximum Mounting Torque TOR :8 kg*cm



Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃



Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃



Package: KBJ6


GBJ25005 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionR-PSFM-T4
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current320 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage50 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
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