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G60N04

Description
Drain-source voltage (Vdss): 45V Continuous drain current (Id) (at 25°C): 60A (Tc) Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 12mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 65W (Tc) Type: N channel N channel, 45V, 60A, 9.7mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,5 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
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G60N04 Overview

Drain-source voltage (Vdss): 45V Continuous drain current (Id) (at 25°C): 60A (Tc) Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 12mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 65W (Tc) Type: N channel N channel, 45V, 60A, 9.7mΩ@10V

G60N04 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)45V
Continuous drain current (Id) at 25°C60A(Tc)
Gate-source threshold voltage2.2V @ 250uA
Drain-source on-resistance12mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)65W(Tc)
typeN channel

G60N04 Preview

Download Datasheet
GOFORD
Description
The G60N04 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
.G60N04
General Features
V
DSS
45V
@4.5V (Typ) @ 10V (Typ)
R
DS(ON)
11
m
R
DS(ON)
9.7
m
I
D
60
A
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Marking and pin assignment
Application
Load switching
Hard switched and high frequency circuits
Uninterruptible power supply
TO-252
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
E
AS
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
45
±20
60
42
220
65
0.43
400
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
I
DM
P
D
T
J
,T
STG
HTTP://www.gofordsemi.com
TEL:0755-29961262
FAX:0755-29961466
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