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G3S06508A

Description
DC reverse withstand voltage (Vr): 650V Average rectified current (Io): 25.5A Forward voltage drop (Vf): 1.7V @ 8A
CategoryDiscrete semiconductor    Schottky diode   
File Size1MB,5 Pages
ManufacturerGlobal Power Technology Co., Ltd.
Websitehttps://www.globalpowertech.cn/
Global Power Technology is one of the advocates of the industrialization of silicon carbide (SiC) power devices in China. Global Power Technology is committed to the development of China's semiconductor power device manufacturing industry and provides high-quality semiconductor power device products and professional services to global power device consumers. Global Power Technology's headquarters is located in the northern territory of Dongsheng Science Park, Zhongguancun, Beijing, China, with an elegant environment. Global Power Technology has a complete semiconductor process wafer fab in Beijing, which can realize the manufacturing process of semiconductor power devices on 4-inch SiC wafers and has the only silicon carbide device production line in China. As the only silicon carbide R&D, production and platform service company in China, Global Power Technology's product line involves basic core technology products, silicon carbide molding products and multiple industry solutions. The company's core products are represented by silicon carbide Schottky diodes, of which 600V/5A~50A, 1200V/5A~50A and 1700V/10A series of silicon carbide Schottky diode products have been put into mass production, and the product quality is fully comparable to the advanced level of the international industry. Tyco Tianrun is promoting SiC power devices to more and wider application fields through joint exploration and development with industry peers, research institutes, and domestic and foreign experts.
Download Datasheet Parametric View All

G3S06508A Overview

DC reverse withstand voltage (Vr): 650V Average rectified current (Io): 25.5A Forward voltage drop (Vf): 1.7V @ 8A

G3S06508A Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)650V
Average rectified current (Io)25.5A
Forward voltage drop (Vf)1.7V @ 8A

G3S06508A Preview

Download Datasheet
产品规格书
V2018.1.0
G3S06508A
650V/8A
碳化硅肖特基功率二极管
产品特性
正温度系数,易于并联½用
不受温度½响的开关特性
最高工½温度 175℃
零反向恢复电流
零正向恢复电压
产品概览
V
RRM
I
F,
T
c
≤150℃
Q
C
650
8
30
V
A
nC
产品优点
单极器件
极大降½开关损耗
并联器件中没有热崩溃
降½系统对散热片的依赖
应用领域
开关模式电源(SMPS),功率因数校正(PFC)
电机驱动,光伏逆变器,不间断电源,
风力发动机,列½牵引系统,电动½½。
产品型号
G3S06508A
封装½式
TO-220AC
打标
G3S06508A
G3S06508A
©2018
泰科天润半导½科技(北京)有限公司
-
版权所有
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