G3S06503C datasheet, PDF - EEWORLD Datasheet

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G3S06503C: DescriptionDC reverse withstand voltage (Vr): 650V Average rectified current (Io): 11A Forward voltage drop (Vf): 1.7V @ 3A; CategoryDiscrete semiconductor Schottky diode; File Size1MB，5 Pages; ManufacturerGlobal Power Technology Co., Ltd.; Websitehttps://www.globalpowertech.cn/; Global Power Technology is one of the advocates of the industrialization of silicon carbide (SiC) power devices in China. Global Power Technology is committed to the development of China's semiconductor power device manufacturing industry and provides high-quality semiconductor power device products and professional services to global power device consumers. Global Power Technology's headquarters is located in the northern territory of Dongsheng Science Park, Zhongguancun, Beijing, China, with an elegant environment. Global Power Technology has a complete semiconductor process wafer fab in Beijing, which can realize the manufacturing process of semiconductor power devices on 4-inch SiC wafers and has the only silicon carbide device production line in China. As the only silicon carbide R&D, production and platform service company in China, Global Power Technology's product line involves basic core technology products, silicon carbide molding products and multiple industry solutions. The company's core products are represented by silicon carbide Schottky diodes, of which 600V/5A~50A, 1200V/5A~50A and 1700V/10A series of silicon carbide Schottky diode products have been put into mass production, and the product quality is fully comparable to the advanced level of the international industry. Tyco Tianrun is promoting SiC power devices to more and wider application fields through joint exploration and development with industry peers, research institutes, and domestic and foreign experts.

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G3S06503C Overview

DC reverse withstand voltage (Vr): 650V Average rectified current (Io): 11A Forward voltage drop (Vf): 1.7V @ 3A

G3S06503C Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	650V
Average rectified current (Io)	11A
Forward voltage drop (Vf)	1.7V @ 3A

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