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G1MF1

Description
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size263KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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G1MF1 Overview

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon,

G1MF1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionR-PDSO-F2
Reach Compliance Codeunknow
Other featuresFREE WHEELING DIODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage1000 V
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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G1A THRU G1M 
 
RoHS
COMPLIANT
Surface Mount General Purpose Rectifier
Features
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● Switching for general purpose
● High forward surge capability
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in general purpose switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer and telecommunication.
Mechanical Date
Package:
SOD-123FL
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
 
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, Resistance load, Ta (FIG.1)
Surge(non-repetitive)forward current
@ 60Hz half-sine wave,1 cycle, Tj=25℃
Storage temperature
Junction temperature
VRRM
IO
V
A
SYMBOL
UNIT
G1A
G1A
50
G1B
G1B
100
G1D
G1D
200
G1G
G1G
400
1.0
G1J
G1J
600
G1K
G1K
800
G1M
G1M
1000
IFSM
Tstg
Tj
A
30
-55 ~+150
-55 ~+150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
SYMBOL
UNIT
TEST
CONDITIONS
IFM=1.0A
Ta=25℃
IRRM
μA
Ta=125℃
100
G1A
G1B
G1D
G1G
G1J
G1K
G1M
VF
V
1.1
5
Maximum DC reverse current at
rated DC blocking voltage per diode
1/4
S-S036
Rev. 2.4, 23-Apr-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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