FMMT491 datasheet, PDF - EEWORLD Datasheet

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FMMT491: DescriptionRated power: 500mW Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 60V Transistor type: NPN NPN; CategoryDiscrete semiconductor triode; File Size483KB，3 Pages; ManufacturerSHIKUES; Websitehttp://www.shike.tw; Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.

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FMMT491 Overview

Rated power: 500mW Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 60V Transistor type: NPN NPN

FMMT491 Parametric

Parameter Name	Attribute value
rated power	500mW
Collector current Ic	1A
Collector-emitter breakdown voltage Vce	60V
Transistor type	NPN

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FMMT491

TRANSISTOR (NPN)

SOT-23

1．BASE

2．EMITTER

3．COLLECTOR

MARKING: 4 9 1

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

stg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Parameter

Value

0.3

150

-55-150

Units

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

EBO

FE(1)

DC current gain

FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

CE(sat)

BE(sat)

=1V, I

= 800mA

=800mA, I

= 80mA

=800mA, I

= 80mA

=10V, I

= 50mA

f=30MHz

100

0.5

1.2

MHz

Test

conditions

MIN

0.1

200

350

TYP

MAX

UNIT

μA

= 100μA, I

= 0.1mA, I

=100μA, I

=40V, I

=20V, I

= 5V, I

=1V, I

= 100mA

REV.08

1 of 3

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