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ESB1234NF

Description
Analog front-end chip for multi-cell battery detection and balancing
CategoryAnalog front end - AFE   
File Size184KB,1 Pages
ManufacturerEastSoft
Websitehttp://www.ichaier.com/
Shanghai Neusoft Carrier Microelectronics Co., Ltd. (formerly Shanghai Haier Integrated Circuit Co., Ltd.) has been focusing on chip design for 15 years. It was acquired by Neusoft Carrier in 2015. After years of hard work, it has mastered core technologies with independent intellectual property rights and has achieved fruitful results in design process, product architecture, behavioral level description, RTL level design, verification, layout and home appliance control board design.
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ESB1234NF Overview

Analog front-end chip for multi-cell battery detection and balancing

ESB1234NF Parametric

Parameter NameAttribute value
Product numberESB1234NF
EncapsulationQFN20
Number of battery strings3~5
Vin voltage6.0V~25V
LDO voltage5V
CH_FETpush-pull output
Equalization function
Overcurrent protection
MOSFET driver
Voltage detection
Current Detection
temperature check
way of communicationIIC
Operating temperature-40℃ ~ 85℃
special function-

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ESB1233NF/ESB1234NF
用于多节电池检测与均衡的模拟前端芯片
芯片概述
ESB1233NF/ESB1234NF是一款高精度、高集成度
的电池管理系统(BMS)模拟前端(AFE)芯片,该
芯片可以协同外部MCU为各电池单元提供充放电均
衡管理。该芯片可以支持高达3~5节锂电池串联组成
的锂电池组的应用。
ESB1233NF/ESB1234NF内部集成了输出电压可选
择的3.3V/5V
LDO(LDO为外部MCU提供电源,
ESB1233NF/ESB1234NF中LDO的输出电压分别为
3.3V,5.0V)、MOSFET驱动、电池电压检测、电
池单元均衡、I2C通信与接口、电流检测放大器、温
度检测、过温保护、过流保护、CH_FET/DS_FET
驱动电路的短路电流保护、比较器(用于放电通路的
短路检测)。
外部MCU可以通过I2C总线读取任意电池单元的电
压(0.5V-5.0V或0.5V-3.3V)。通过对I2C接口的控
制,MCU中的ADC可以测量
ESB1233NF/ESB1234NF芯片内部的不同电压(电
池电压、电池充放电电流和芯片内部温度)。各电池
单元½可以被MCU控制,并通过MCU中的ADC对其
进行测量。从通道选择到测量完成,整个过程的读取
时间大约为150us。建议I2C通信时钟配½为400kHz
ESB1233NF/ESB1234NF芯片内部的均衡驱动电路
可以提供30mA的均衡电流,控制均衡驱动电路的寄
存器½可以通过I2C进行设½。
ESB1233NF/ESB1234NF采用QFN-20(无铅)封装
½式。
芯片特性
通信接口
采用I2C接口实现ESB1233NF/ESB1234NF与
MCU之间的通信
通过内部寄存器实现过流设½与Cell电压选择
通过内部寄存器实现过流保护延时设½
测量电池组中各节电池的电压
电池检测
充电通路
支持
3~5节
锂电池或磷酸铁锂电池串联
每节电池电压范围为
1.5V~4.5V(ESB1233NF),
2V~4.5V(ESB1234NF)
电池单元均衡电流的典型值为
30mA
可通过MCU控制CH_FET的过流保护值
CH_FET为推½输出
支持10V~16V
PWM或DC输出,控制MOSFET
为MOSFET提供大于50mA的驱动电流
可通过MCU控制DS_FET的过流保护值
内部集成3.3V/5V
LDO(输出电流为30mA)
为外部的MCU提供电源
放电通路
内部集成3.3V/5V
LDO
内部集成15V
LDO
内部集成15V
LDO,给MOSFET驱动电路供电
工½模式: 正常工½模式、开关模式
输出电压VOUT缓冲器
内部集成具有
5mA
驱动½力的缓冲器
LDO过流保护功½
CH_FET / DS_FET驱动的短路电流保护功½
芯片过温保护功½:过温保护值为150℃,恢复
值为130℃(迟滞为20°C)
集成充放电电流测量、温度测量功½
工½条件
工½电压范围:
4.5V~25V(ESB1233NF),或
6V~25V(ESB1234NF)
工½温度范围:
-40℃ ~ 85℃
其它功½模块
产品订购信息
型号
ESB1233NF
ESB1234NF
ESB
XXXX
NF
应用领域
线性稳压器
(LDO)
输出电压(V)
3.3
5
封装
QFN20
QFN20
便携设备中的多节电池系统
便携式电动工具
电动自行½
家用电器
线性稳压器(LDO)输出电压
V1.0
版权所有©上海东½½½波微电子有限公司
1/1
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