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ES3GB

Description
Super Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size805KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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ES3GB Overview

Super Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode

Features

Product Name: Super Fast Recovery Rectifier Diode


Product model: ES3GB


product features:


Io: 3.0A


VRRM: 50V-600V


High forward surge current capability


High surge forward current capability


Package: Molded plastic


Cases: Molded plastic



use:


Rectifier



product data:


Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 400V



Average Forward Current IF(AV) Average forward current: 3.0A



Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 100A



Junction Temperature TJ Junction temperature: -55 to +150 ℃



Storage Temperature TSTG storage temperature: -55 to +150 ℃



Peak Forward Voltage (IFM=3.0A) VFM Forward peak voltage: 1.3V



Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 10μA


IRRM2 (Ta=125℃) Reverse peak current: 500μA



Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns



Thermal Resistance (Typical) RθJ-A Thermal resistance (typical) : 47 ℃/W; RθJ-L Thermal resistance (typical) : 12 ℃/W



Package: DO-214AA (SMB)


ES3GB Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current100 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.035 µs
surface mountYES

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ES3AB THRU ES3KB
Surface Mount Super Fast Recovery Rectifier
Features
RoHS
COMPLIANT
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Super Fast reverse recovery time
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °
C
Typical Applications
For use in high frequency rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, and telecommunication.
Mechanical Data
Package:
DO-214AA (SMB
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, resistance load, TL (Fig.1)
Surge(non-repetitive)forward current
@ 60Hz half-sine wave,1 cycle, Ta=25℃
Storage temperature
Junction temperature
VRRM
IO
IFSM
Tstg
Tj
V
A
A
SYMBOL UNIT
ES3AB
ES3AB
50
ES3BB
ES3BB
100
ES3CB
ES3CB
150
ES3DB
ES3DB
200
ES3FB
ES3FB
300
3.0
90
-55~+150
-55~+150
ES3GB
ES3GB
400
ES3HB
ES3HB
500
ES3JB
ES3JB
600
ES3KB
ES3KB
800
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum reverse recovery time
Maximum DC reverse current at
rated DC blocking voltage per
diode
@ VRM=VRRM
SYMBOL UNIT
TEST
CONDITIONS
IFM=3.0A
I
F
=0.5A,I
R
=1.0A,
I
rr
=0.25A
Ta =25℃
IRRM
μA
Ta =125℃
100
ES3AB ES3BB ES3CB ES3DB ES3FB ES3GB ES3HB ES3JB
ES3KB
VF
V
0.95
1.3
1.7
1.85
t
rr
ns
35
10
1/5
S-S316
Rev. 2.3, 14-Jan-15
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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