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ES1J-AU_R2_100A1

Description
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size185KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ES1J-AU_R2_100A1 Overview

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

ES1J-AU_R2_100A1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-C2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101; TS 16949
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

ES1J-AU_R2_100A1 Preview

Download Datasheet
ES1A-AU~ES1J-AU
SURFACE MOUNT SUPERFAST RECTIFIER
1 Amperes
CURRENT
VOLTAGE
50 to 600 Volts
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Superfast recovery times for high efficiency.
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• Glass passivated junction
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
• Lead free in comply with EU RoHS 2002/95/EC directives.
0.114(2.90)
0.098(2.50)
0.181(4.60)
0.157(4.00)
0
.
012(0
.
305)
0
.
006(0.152)
0.008(0.203)
0.002(0.051)
0.208(5.28)
0.188(4.80)
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.0023 ounce, 0.0679 gram
0.060(1.52)
0.030(0.76)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PA RA ME TE R
Ma xi mum R e curre nt P ea k R e ve rse Vo lta g e
Ma xi mum R MS Volta g e
Ma xi mum D C B lo c k i ng Volta g e
Ma xi mum A ve ra g e F o rwa rd C urre nt a t T
L
=1 2 0
O
C
P e ak F o rwa rd S urg e C urre nt : 8 .3 ms s i ng le ha lf si ne -wa ve
s upe ri mp o s ed on ra te d lo a d (JE D E C metho d )
Ma xi mum F o rward Vo lta g e a t 1 A
Ma xi mum D C R eve rs e C urre nt T
J
= 2 5
O
C
a t Rate d D C B loc k i ng Vo lta g e T
J
=1 0 0
O
C
Ma xi mum Re ve rs e Re c ove ry Ti me (No te 1 )
Typi c a l J unc ti o n C a p a c i ta nc e (No te 2 )
Typi c a The rmal Re s i sta nc e (Note 3 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
S YMB OL E S 1 A -A U E S 1 B -A U E S 1 C -A U E S 1 D -A U E S 1 E -A U E S 1 G-A U E S 1 J -A U UNITS
V
RRM
V
RMS
V
DC
I
F ( AV )
I
F SM
V
F
I
R
t
rr
C
J
R
θJ
L
T
J
,T
S TG
0 .9 5
1
15 0
35
7
35
-5 5 to +1 5 0
O
50
35
50
100
70
100
150
105
150
0.062(1.60)
0.047(1.20)
200
140
200
1
30
300
210
300
400
280
400
600
420
600
V
V
V
A
A
1 .2 5
1 .7
V
μA
ns
pF
C / W
O
C
NOTES:
1.Reverse Recovery Tset Conditions:I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1.0MHz and applied reverse voltage of 4.0 volts.
3.8.0mm
2
( .013mm thick ) land areas.
STAD-MAR.05.2009
PAGE . 1
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