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ES1J

Description
Super Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size141KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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ES1J Overview

Super Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode

Features

Product Name: Super Fast Recovery Rectifier Diode


Product model: ES1J


product features:


I:1.0A


VRRM :50V-600V


High forward surge current capability


High surge forward current capability


Package: Molded plastic


Cases: Molded plastic



use:


Rectifier



product data:


Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 600V



Average Forward Current IF(AV) Average forward current: 1.0A



Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 30A



Junction Temperature TJ :-55 to +150 ℃



Storage Temperature TSTG storage temperature: -55 to +150 ℃



Peak Forward Voltage (IFM=1.0A) VFM Forward peak voltage: 1.7V



Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 5.0μA


IRRM2 (Ta=125℃) Reverse peak current: 100μA



Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns



Thermal Resistance (Typical) RθJ-A Thermal resistance (typical) : 85 ℃/W; RθJ-L Thermal resistance (typical) : 35 ℃/W



Package: DO-214AC (SMA)


ES1J Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codeunknown
Other featuresFREE WHEELING DIODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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