ES1H datasheet, PDF - EEWORLD Datasheet

ES1H: DescriptionSuper Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode; CategoryDiscrete semiconductor diode; File Size141KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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Super Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode

Features

Product Name: Super Fast Recovery Rectifier Diode

Product model: ES1H

product features:

I：1.0A

VRRM ：50V-600V

High forward surge current capability

High surge forward current capability

Package: Molded plastic

Cases: Molded plastic

use:

Rectifier

product data:

Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 500V

Average Forward Current IF(AV) Average forward current: 1.0A

Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 30A

Junction Temperature TJ ：-55 to +150 ℃

Storage Temperature TSTG storage temperature: -55 to +150 ℃

Peak Forward Voltage (IFM=1.0A) VFM Forward peak voltage: 1.7V

Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 5.0μA

IRRM2 (Ta=125℃) Reverse peak current: 100μA

Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns

Thermal Resistance (Typical) RθJ-A Thermal resistance (typical) : 85 ℃/W; RθJ-L Thermal resistance (typical) : 35 ℃/W

Package: DO-214AC (SMA)

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	R-PDSO-C2
Reach Compliance Code	compliant
Other features	FREE WHEELING DIODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	30 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum repetitive peak reverse voltage	500 V
Maximum reverse recovery time	0.035 µs
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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